STN1NK60ZL STMicroelectronics

STN1NK60ZL N-channel 600 V, 10.4 typ., 0.44 A SuperMESH Power MOSFET in a SOT-223 package Datasheet - production data Features R DS(on) Order code VDS ID PTOT max. STN1NK60ZL 600 V 15 0.44 A 3.3 W 100% avalanche tested Extremely high dv/dt capability Gate charge minimized ESD improved capability Figure 1: Internal schematic diagram Applications Switching applications Description This high voltage device is an N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Table 1: Device summary Order code Marking Package Packing STN1NK60ZL 1NK60ZL SOT-223 Tube December 2016 DocID026549 Rev 2 1/12 www.st.com This is information on a product in full production. Contents STN1NK60ZL Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.2 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 SOT-223 package information .......................................................... 9 5 Revision history ............................................................................ 11 2/12 DocID026549 Rev 2