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This literature is subject to all applicable copyright laws and is not for resale in any manner.TM FDB15N50 N-Channel UniFET MOSFET November 2013 FDB15N50 TM N-Channel UniFET MOSFET 500 V, 15 A, 380 m Features Description TM UniFET MOSFET is Fairchild Semiconductors high Low gate charge Q results in simple drive requirement g voltage MOSFET family based on planar stripe and (Typ. 33 nC) DMOS technology. This MOSFET is tailored to reduce Improved Gate, avalanche and high reapplied dv/dt on-state resistance, and to provide better switching ruggedness performance and higher avalanche energy strength. This Reduced R ( 330m ( Typ.) V = 10 V, I = 7.5 A) DS(on) GS D device family is suitable for switching power converter Reduced Miller capacitance and low Input capacitance applications such as power factor correction (PFC), flat (Typ. C = 16 pF) rss panel display (FPD) TV power, ATX and electronic lamp Improved switching speed with low EMI ballasts. o 175 C rated junction temperature Applications Lighting Uninterruptible Power Supply AC-DC Power Supply D D G G 2 S D -PAK S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDB15N50 Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage 30 V GS Drain Current o 15 A Continuous (T = 25 C, V = 10V) C GS I o D Continuous (T = 100 C, V = 10V) C GS 11 A Pulsed (Note 1) 60 A Power dissipation 300 W P o o D Derate above 25 C 2 W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG o Soldering Temperature for 10 seconds 300 (1.6mm from case) C Thermal Characteristics Symbol Parameter FDB15N50 Unit o R Thermal Resistance Junction to Case, Max. 0.50 C/W JC o R Thermal Resistance Junction to Ambient, Max. 62 C/W JA 2003 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDB15N50 Rev. C1