MOSFET N-Channel, POWERTRENCH 150 V, 169 A, 6.3 m FDBL86210-F085 Features www.onsemi.com Typical r = 5 m at V = 10 V, I = 80 A DS(on) GS D Typical Q = 70 nC at V = 10 V, I = 80 A g(tot) GS D D UIS Capability AECQ101 Qualified and PPAP Capable This Device is PbFree and are RoHS Compliant Applications G Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers S Integrated Starter/Alternator NChannel Primary Switch for 12 V Systems MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) J Symbol Parameter Ratings Unit V Drain to Source Voltage 150 V DSS V Gate to Source Voltage 20 V GS HPSOF8L I A Drain Current Continuous 169 D CASE 100CU (V = 10), T = 25C (Note 1) GS C Pulsed Drain Current, T = 25C See Figure 4 C MARKING DIAGRAM E Single Pulse Avalanche Energy 502 mJ AS (Note 2) P Power Dissipation 500 W D Y&Z&3&K Derate Above 25C 3.3 W/C FDBL T , T Operating and Storage Temperature 55 to +175 C J STG 86210 R Thermal Resistance Junction to Case 0.3 C/W JC R Maximum Thermal Resistance 43 C/W JA Junction to Ambient (Note 3) Stresses exceeding those listed in the Maximum Ratings table may damage the Y = ON Semiconductor Logo device. If any of these limits are exceeded, device functionality should not be &Z = Assembly Plant Code assumed, damage may occur and reliability may be affected. &3 = Numeric Date Code 1. Current is limited by silicon. &K = Lot Code 2. Starting T = 25C, L = 0.24 mH, I = 64 A, V = 100 V during inductor J AS DD FDBL86210 = Specific Device Code charging and V = 0 V during time in avalanche. DD 3. R is the sum of the junction to case and case to ambient thermal JA resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. R is guaranteed by design, while R ORDERING INFORMATION JC JA is determined by the users board design. The maximum rating presented 2 Device Top Mark Package Shipping here is based on mounting on a 1 in pad of 2oz copper. FDBL86210 FDBL86210 HPSOF8L 2000 Units/ F085 Tape&Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: June, 2020 Rev. 4 FDBL86210F085/DFDBL86210 F085 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage 150 V I = 250 A, V = 0 V DSS D GS I Drain to Source Leakage Current V = 150 V, T = 25C 1 A DSS DS J V = 0 V GS T = 175C (Note 4) 1 mA J I Gate to Source Leakage Current V = 20 V 100 nA GSS GS ON CHARACTERISTICS V Gate to Source Threshold Voltage 2.0 2.8 4.0 V V = V , I = 250 A GS(th) GS DS D r Drain to Source On Resistance I = 80 A, T = 25C 5 6.3 m DS(on) D J V = 10 V GS T = 175C (Note 4) 14 17.5 m J DYNAMIC CHARACTERISTICS C Input Capacitance V = 75 V, V = 0 V, f = 1 MHz 5805 pF iss DS GS C Output Capacitance 536 pF oss C Reverse Transfer Capacitance 16 pF rss R Gate Resistance f = 1 MHz 2.2 g Q Total Gate Charge at 10 V V = 0 to 10 V V = 75 V, 70 90 nC g(ToT) GS DD I = 80 A D Q Threshold Gate Charge V = 0 to 2 V 10.5 13 nC g(th) GS V = 75 V, I = 80 A Q Gate to Source Gate Charge 32.5 nC gs DD D Q Gate to Drain Miller Charge 10 nC gd SWITCHING CHARACTERISTICS t TurnOn Time V = 75 V, I = 80 A, 80 ns on DD D V = 10 V, R = 6 GS GEN t TurnOn Delay Time 39 ns d(on) t Rise Time 30 ns r t TurnOff Delay Time 70 ns d(off) t Fall Time 23 ns f t TurnOff Time 130 ns off DRAINSOURCE DIODE CHARACTERISTIC V Source to Drain Diode Voltage I = 80 A, V = 0 V 1.25 V SD SD GS I = 40 A, V = 0 V 1.2 V SD GS T Reverse Recovery Time I = 80 A, dI /dt = 100 A/ s, 108 125 ns rr F SD V = 120 V DD Q Reverse Recovery Charge 323 467 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at T = 175C. Product is not tested to this condition in production. J www.onsemi.com 2