Product Information

FDBL86363_F085

FDBL86363_F085 electronic component of ON Semiconductor

Datasheet
Fairchild Semiconductor MOSFET N-Channel Power Trench MOSFET

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.6325 ea
Line Total: USD 6.63

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

FDBL86363_F085
ON Semiconductor

1 : USD 6.6325
10 : USD 4.3413
25 : USD 4.1053
100 : USD 3.5613
500 : USD 3.0276
1000 : USD 2.5555
2000 : USD 2.4016

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 2000
Multiples : 2000

Stock Image

FDBL86363_F085
ON Semiconductor

2000 : USD 3.8166

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
FDBL86366_F085 electronic component of ON Semiconductor FDBL86366_F085

Fairchild Semiconductor MOSFET N-Channel Power Trench MOSFET
Stock : 8000

FDBL86561_F085 electronic component of ON Semiconductor FDBL86561_F085

Fairchild Semiconductor MOSFET
Stock : 268

FDBL86563_F085 electronic component of ON Semiconductor FDBL86563_F085

Fairchild Semiconductor MOSFET 60V 240A TO-LL N-Chnl PowerTrench
Stock : 0

FDBL9401_F085 electronic component of ON Semiconductor FDBL9401_F085

MOSFET TO-leadless, PT8,40V 300A, 0.76mOhm
Stock : 0

FDBL9403_F085 electronic component of ON Semiconductor FDBL9403_F085

MOSFET TO-leadless, PT8, 40V
Stock : 0

FDBL86566-F085 electronic component of ON Semiconductor FDBL86566-F085

MOSFET 60V N-Channel Power Trench MOSFET
Stock : 0

FDBL9403L-F085 electronic component of ON Semiconductor FDBL9403L-F085

MOSFET NMOS TOLL 40V LL 0. 72 MOH
Stock : 0

FDBL9401L-F085 electronic component of ON Semiconductor FDBL9401L-F085

MOSFET NMOS LL TOLL 40V 0. 55 MOH
Stock : 0

FDBL86363-F085 electronic component of ON Semiconductor FDBL86363-F085

MOSFET N-Channel Power Trench MOSFET
Stock : 0

FDBL86561-F085 electronic component of ON Semiconductor FDBL86561-F085

MOSFET NMOS TOLL 60V 1.1 MOHM
Stock : 13737

Image Description
FDBL86366_F085 electronic component of ON Semiconductor FDBL86366_F085

Fairchild Semiconductor MOSFET N-Channel Power Trench MOSFET
Stock : 8000

FDBL86561_F085 electronic component of ON Semiconductor FDBL86561_F085

Fairchild Semiconductor MOSFET
Stock : 268

FDBL86563_F085 electronic component of ON Semiconductor FDBL86563_F085

Fairchild Semiconductor MOSFET 60V 240A TO-LL N-Chnl PowerTrench
Stock : 0

FDC021N30 electronic component of ON Semiconductor FDC021N30

MOSFET 30V/20V NChnl Power Trench MOSFET
Stock : 0

FDC5614P electronic component of ON Semiconductor FDC5614P

Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6
Stock : 171000

FDC6420C electronic component of ON Semiconductor FDC6420C

SOT-23-6 MOSFETs ROHS
Stock : 12000

FDC642P_F085 electronic component of ON Semiconductor FDC642P_F085

MOSFET P-CHANNEL 2.5V PowerTrench MOS
Stock : 0

FDC8886 electronic component of ON Semiconductor FDC8886

MOSFET 30V N-Channel Power Trench MOSFET
Stock : 3000

FDD050N03B electronic component of ON Semiconductor FDD050N03B

Fairchild Semiconductor MOSFET 30V N-Channel PowerTrench
Stock : 0

FDD120AN15A0_F085 electronic component of ON Semiconductor FDD120AN15A0_F085

MOSFET 14A 150V MOSFET
Stock : 2500

MOSFET POWERTRENCH N-Channel 80 V, 240 A, 2.0 m FDBL86363-F085 Features www.onsemi.com Typical R = 1.5 m at V = 10 V, I = 80 A DS(on) GS D Typical Q = 130 nC at V = 10 V, I = 80 A g(tot) GS D D UIS Capability AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant Applications G Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers S Integrated Starter/Alternator NChannel Primary Switch for 12 V Systems MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) J Symbol Parameter Ratings Unit V V 80 DraintoSource Voltage DSS V V GatetoSource Voltage 20 GS HPSOF8L A CASE 100CU I Drain Current Continuous 240 D (V = 10), T = 25C (Note 1) GS C Pulsed Drain Current, T = 25C See Figure 4 MARKING DIAGRAM C mJ E Single Pulse Avalanche Energy 512 AS (Note 2) W P Power Dissipation 357 D Y&Z&3&K FDBL W/C 2.38 Derate Above 25C 86363 C T , T Operating and Storage Temperature 55 to +175 J STG C/W R Thermal Resistance, Junction to Case 0.42 JC C/W R Maximum Thermal Resistance, 43 JA Junction to Ambient (Note 3) Y = ON Semiconductor Logo &Z = Assembly Plant Code Stresses exceeding those listed in the Maximum Ratings table may damage the &3 = Numeric Date Code device. If any of these limits are exceeded, device functionality should not be &K = Lot Code assumed, damage may occur and reliability may be affected. 1. Current is limited by silicon. FDBL86363 = Specific Device Code 2. Starting T = 25C, L = 0.25 mH, I = 64 A, V = 80 V during inductor J AS DD charging and V = 0 V during time in avalanche. DD 3. R is the sum of the junction to case and case to ambient thermal JA ORDERING INFORMATION resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. R is guaranteed by design, while R Device Top Mark Package Shipping JC JA is determined by the board design. The maximum rating presented here is FDBL86363 FDBL86363 HPSOF8L 2000 Units/ 2 based on mounting on a 1 in pad of 2oz copper. F085 Tape&Reel *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2020 Rev. 3 FDBL86363F085/DFDBL86363 F085 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BV DraintoSource Breakdown Voltage 80 V I = 250 A, V = 0 V DSS D GS I DraintoSource Leakage Current V = 80 V, T = 25C 1 A DSS DS J V = 0 V GS T = 175C (Note 4) 1 mA J I GatetoSource Leakage Current V = 20 V 100 nA GSS GS ON CHARACTERISTICS V Gate to Source Threshold Voltage 2.0 3.0 4.0 V V = V , I = 250 A GS(th) GS DS D R Drain to Source on Resistance I = 80 A, T = 25C 1.5 2.0 m DS(on) D J V = 10 V GS T = 175C (Note 4) 3.1 4.1 m J DYNAMIC CHARACTERISTICS C Input Capacitance V = 40 V, V = 0 V, f = 1 MHz 10000 pF iss DS GS C Output Capacitance 1540 pF oss C Reverse Transfer Capacitance 70 pF rss R Gate Resistance f = 1 MHz 2.8 g Q Total Gate Charge at 10 V V = 0 to 10 V V = 64 V, 130 169 nC g(ToT) GS DD I = 80 A D Q Threshold Gate Charge V = 0 to 2 V 18 27 nC g(th) GS V = 64 V, I = 80 A Q GatetoSource Gate Charge 47 nC gs DD D Q GatetoDrain Miller Charge 24 nC gd SWITCHING CHARACTERISTICS t TurnOn Time V = 40 V, I = 80 A, 133 ns on DD D V = 10 V, R = 6 GS GEN t TurnOn Delay 39 ns d(on) t Rise Time 63 ns r t TurnOff Delay 61 ns d(off) t Fall Time 33 ns f t TurnOff Time 140 ns off DRAINSOURCE DIODE CHARACTERISTIC V SourcetoDrain Diode Voltage I = 80 A, V = 0 V 1.25 V SD SD GS I = 40 A, V = 0 V 1.2 V SD GS t ReverseRecovery Time I = 80 A, dI /dt = 100 A/ s, 83 108 ns rr F SD V = 64 V DD Q ReverseRecovery Charge 118 153 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at T = 175C. Product is not tested to this condition in production. J www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted