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FDC637BNZ N-Channel 2.5V Specified PowerTrench MOSFET September 2007 FDC637BNZ tm N-Channel 2.5V Specified PowerTrench MOSFET 20V, 6.2A, 24m Features General Description Max r = 24m at V = 4.5V, I = 6.2A This N-Channel 2.5V specified MOSFET is produced using DS(on) GS D Fairchild Semiconductors advanced PowerTrench process Max r = 32m at V = 2.5V, I = 5.2A DS(on) GS D that has been especially tailored to minimize the on-state Fast switching speed resistance and yet maintain low gate charge for superior switching performance. Low gate charge (8nC typical) These devices have been designed to offer exceptional power High performance trench technology for extremely low r DS(on) dissipation in a very small footprint compared with bigger SO-8 SuperSOT6 package: small footprint (72% smaller than and TSSOP-8 packages. standard SO-8 low profile (1mm thick) HBM ESD protection level > 2kV typical (Note 3) Applications Manufactured using green packaging material DC - DC Conversion Halide-Free Load switch RoHS Compliant Battery Protection S D D 1 6 D D D 2 5 D G D G 3 S 4 D Pin 1 TM SuperSOT -6 MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 20 V DS V Gate to Source Voltage 12 V GS Drain Current -Continuous T = 25C (Note 1a) 6.2 A I A D -Pulsed 20 Power Dissipation T = 25C (Note 1a) 1.6 A P W D Power Dissipation T = 25C (Note 1b) 0.8 A T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 78 JA C/W R Thermal Resistance, Junction to Ambient (Note 1b) 156 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity .637Z FDC637BNZ SSOT6 7 8mm 3000 units 1 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FDC637BNZ Rev.C