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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.FDC6392S April 2002 FDC6392S 20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features MOSFET: The FDC6392S combines the exceptional performance of Fairchild s PowerTrench MOSFET technology with a 2.2 A, 20V. RDS(ON) = 150 m VGS = 4.5V very low forward voltage drop Schottky barrier rectifier RDS(ON) = 200 m VGS = 2.5V in an SSOT-6 package. Low Gate Charge (3.7nC typ) This device is designed specifically as a single package solution for DC to DC converters. It features a fast Compact industry standard SuperSOT -6 package switching, low gate charge MOSFET with very low on- Schottky: state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC V < 0.45 V 1 A F converter topologies. D2 S1 D1 1 6 G2 2 5 S2 TM SuperSOT -6 G1 Pin 1 3 4 SuperSOT-6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V MOSFET Drain-Source Voltage 20 V DSS V MOSFET Gate-Source Voltage 12 V GSS I Drain Current Continuous (Note 1a) 2.2 A D Pulsed 6 P Power Dissipation for Single Operation (Note 1a) 0.96 W D (Note 1b) 0.9 (Note 1c) 0.7 T , T Operating and Storage Junction Temperature Range 55 to +150 J STG C V Schottky Repetitive Peak Reverse Voltage 20 V RRM I Schottky Average Forward Current (Note 1a) 1 A O Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 130 R C/W JA R Thermal Resistance, Junction-to-Case (Note 1) 60 JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .392 FDC6392S 7 8mm 3000 units FDC6392S Rev C(W) 2002 Fairchild Semiconductor Corporation