Product Information

FDD4141_F085

FDD4141_F085 electronic component of ON Semiconductor

Datasheet
MOSFET Trans MOS P-Ch 40V 10.8A 3-Pin 2+Tab

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

15: USD 0.6718 ea
Line Total: USD 10.08

0 - Global Stock
MOQ: 15  Multiples: 15
Pack Size: 15
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 2500
Multiples : 2500

Stock Image

FDD4141_F085
ON Semiconductor

2500 : USD 0.5786

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 2500
Multiples : 2500

Stock Image

FDD4141_F085
ON Semiconductor

2500 : USD 0.573

0 - WHS 3


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

FDD4141_F085
ON Semiconductor

1 : USD 3.3612
10 : USD 1.1653
100 : USD 0.857
500 : USD 0.7266
1000 : USD 0.5922
2500 : USD 0.5563

0 - WHS 4


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 15
Multiples : 15

Stock Image

FDD4141_F085
ON Semiconductor

15 : USD 0.5206

0 - WHS 5


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 15
Multiples : 15

Stock Image

FDD4141_F085
ON Semiconductor

15 : USD 0.6718
25 : USD 0.5754
100 : USD 0.5114
250 : USD 0.5011

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDD4141-F085 P-Channel PowerTrench MOSFET FDD4141-F085 P-Channel PowerTrench MOSFET -40V, -50A, 12.3m General Description Features This P-Channel MOSFET has been produced using ON Semiconductors proprietary PowerTrench technology to Max r = 12.3m at V = -10V, I = -12.7A DS(on) GS D deliver low r and optimized Bvdss capability to offer DS(on) Max r = 18.0m at V = -4.5V, I = -10.4A superior performance benefit in the applications. and optimized DS(on) GS D switching performance capability reducing power dissipation High performance trench technology for extremely low r DS(on) losses in converter/inverter applications. Qualified to AEC Q101 Applications RoHS Compliant Inverter Power Supplies S D G G S D-PAK TO-252 D (TO-252) MOSFET Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage -40 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous (Package limited) T = 25C -50 C -Continuous (Silicon limited) T = 25C -58 C I A D -Continuous T = 25C (Note 1a) -10.8 A -Pulsed -100 E Single Pulse Avalanche Energy (Note 3) 337 mJ AS Power Dissipation T = 25C 69 C P W D Power Dissipation T = 25C (Note 1a) 2.4 A T , T Operating and Storage Junction Temperature Range -55 to +175 C J STG Thermal Characteristics R Maximum Thermal Resistance, Junction to Case 1.8 JC C/W R Maximum Thermal Resistance, Junction to Ambient (Note 1a) 52 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD4141 FDD4141-F085 D-PAK (TO-252) 13 16mm 2500 units Publication Order Number: 2013 Semiconductor Components Industries, LLC. 1 November-2018, Rev.4 FDD4141-F085/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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