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V = 10 V, I = 12 A This N-Channel MOSFET is produced using Fairchild Semicon- DS(on) GS D ductors PowerTrench process that has been tailored to mini- R = 64 m (Typ.) V = 5.0 V, I = 12 A DS(on) GS D mize the on-state resistance while maintaining superior Low Gate Charge (Typ. 22.2 nC) switching performance. Low C (Typ. 42 pF) rss The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance. Fast Switching 100% Avalanche Tested Applications Improved dv/dt Capability LED Monitor Backlight RoHS Compliant LED TV Backlight LED Lighting Consumer Appliances, DC-DC converter (Step up & Step down) 3 3 1. Gate 4,5 2. Source 3. Drain / Anode 4. Cathode 1 5. Cathode 1 2 4 TO252-5L 5 2 o Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDD850N10LD Unit V Drain to Source Voltage 100 V DSS V Gate to Source Voltage 20 V GSS o - Continuous (T = 25 C) 15.3 C I Drain Current A D o - Continuous (T = 100 C) 9.7 C I Drain Current - Pulsed (Note 1) 46 A DM E Single Pulsed Avalanche Energy (Note 2) 41 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns o (T = 25 C) 42 W C P Power Dissipation D o o - Derate Above 25C0.33W/ C o I (AV) Diode Average Rectified Forward Current (T = 138 C) 5 A F C I Diode Non-repetitive Peak Surge Current 60 Hz Single Half-Sine Wave 50 A FSM o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Thermal Characteristics Symbol Parameter FDD850N10LD Unit R Thermal Resistance, Junction to Case for MOSFET, Max. 3.0 JC o R Thermal Resistance, Junction to Case for Diode, Max. 2.5 C/W JC R Thermal Resistance, Junction to Ambient, Max. 87 JA 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDD850N10LD Rev. 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