FDD4685 40V P-Channel PowerTrench MOSFET October 2006 FDD4685 tm 40V P-Channel PowerTrench MOSFET 40V, 32A, 27m Features General Description Max r = 27m at V = 10V, I = 8.4A This P-Channel MOSFET has been produced using Fairchild DS(on) GS D Semiconductors proprietary PowerTrench technology to Max r = 35m at V = 4.5V, I = 7A DS(on) GS D deliver low r and good switching characteristic offering DS(on) High performance trench technology for extremely low r superior performance in application. DS(on) RoHS Compliant Application Inverter Power Supplies S G D G S D-PAK TO-252 D (TO-252) MOSFET Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 40 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous(Package Limited) T = 25C 32 C -Continuous(Silicon Limited) T = 25C (Note 1) 40 C I A D -Continuous T = 25C (Note 1a) 8.4 A -Pulsed 100 E Drain-Source Avalanche Energy (Note 3) 121 mJ AS Power Dissipation T = 25C 69 C P W D Power Dissipation (Note 1a) 3 T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.8 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 40 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD4685 FDD4685 D-PAK(TO-252) 13 12mm 2500 units 1 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FDD4685 Rev.B FDD4685 40V P-Channel PowerTrench MOSFET Electrical Characteristics T = 25C unless otherwise noted J Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV Drain to Source Breakdown Voltage I = 250A, V = 0V 40 V DSS D GS BV Breakdown Voltage Temperature DSS I = 250A, referenced to 25C 33 mV/C D T Coefficient J I Zero Gate Voltage Drain Current V = 32V, V = 0V 1 A DSS DS GS I Gate to Source Leakage Current V = 20V, V = 0V 100 nA GSS GS GS On Characteristics (Note 2) V Gate to Source Threshold Voltage V = V , I = 250A 1 1.6 3 V GS(th) GS DS D V Gate to Source Threshold Voltage GS(th) I = 250A, referenced to 25C 4.9 mV/C D T Temperature Coefficient J V = 10V, I = 8.4A 23 27 GS D r Static Drain to Source On Resistance V = 4.5V, I = 7A 30 35 m DS(on) GS D V = 10V, I = 8.4A, T =125C 33 42 GS D J g Forward Transconductance V = 5V, I = 8.4A 23 S FS DS D Dynamic Characteristics C Input Capacitance 1790 2380 pF iss V = 20V, V = 0V, DS GS C Output Capacitance 260 345 pF oss f = 1MHz C Reverse Transfer Capacitance 140 205 pF rss R Gate Resistance f = 1MHz 4 g Switching Characteristics t Turn-On Delay Time 8 16 ns d(on) V = 20V, I = 8.4A DD D t Rise Time 15 27 ns r V = 10V, R = 6 GS GEN t Turn-Off Delay Time 34 55 ns d(off) t Fall Time 14 26 ns f Q Total Gate Charge 19 27 nC g(TOT) V =20V, I = 8.4A DD D Q Gate to Source Gate Charge V = 5V 5.6 nC gs GS Q Gate to Drain Miller Charge 6.1 nC gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage V = 0V, I = 8.4A (Note 2) 0.85 1.2 V SD GS S t Reverse Recovery Time 30 45 ns rr I = 8.4A, di/dt = 100A/s F Q Reverse Recovery Charge 31 47 nC rr Notes: 1: R is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. JA R is guaranteed by design while R is determined by the users board design. JC JA 2 a. 40C/W when mounted on a 1 in pad of 2 oz copper b. 96C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3: Starting T = 25C, L = 3mH, I = 9A, V = 40V, V = 10V. J AS DD GS www.fairchildsemi.com 2 FDD4685 Rev.B