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V = 10 V, I = 1.85 A UniFET II MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 9 nC) technology. This advanced MOSFET family has the smallest Low C (Typ. 4 pF) rss on-state resistance among the planar MOSFET, and also pro- 100% Avalanche Tested vides superior switching performance and higher avalanche Improved dv/dt Capability energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge ESD Imoroved Capability stress. The body diodes reverse recovery performance of RoHS Compliant UniFET II FRFET MOSFET has been enhanced by lifetime control. Its t is less than 100nsec and the reverse dv/dt immu- rr Applications nity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove LCD/LED/PDP TV additional component and improve system reliability in certain Lighting applications in which the performance of MOSFETs body diode is significant. This device family is suitable for switching power Uninterruptible Power Supply converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp bal- lasts. D D G G S D-PAK S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDD5N50NZFTM Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage 25 V GSS o - Continuous (T = 25 C) 3.7 C I Drain Current A D o - Continuous (T = 100 C) 2.2 C I Drain Current - Pulsed (Note 1) 14 A DM E Single Pulsed Avalanche Energy (Note 2) 165 mJ AS I Avalanche Current (Note 1) 3.3 A AR E Repetitive Avalanche Energy (Note 1) 6.25 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 62.5 W C P Power Dissipation D o o - Derate Above 25C0.5W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Thermal Characteristics Symbol Parameter Unit FDD5N50NZFTM R Thermal Resistance, Junction to Case, Max. 2 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 209 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDD5N50NZF Rev. C1