Product Information

FDD6530A

FDD6530A electronic component of ON Semiconductor

Datasheet
MOSFET 20V N-Ch PowerTrench

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 2500
Multiples : 2500

Stock Image

FDD6530A
ON Semiconductor

2500 : USD 0.4535
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

FDD6530A
ON Semiconductor

1 : USD 1.339
N/A

Obsolete
0 - WHS 3

MOQ : 2500
Multiples : 2500

Stock Image

FDD6530A
ON Semiconductor

2500 : USD 0.4208
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1

Stock Image

FDD6530A
ON Semiconductor

1 : USD 1.2334
10 : USD 1.0274
30 : USD 0.8767
100 : USD 0.7535
500 : USD 0.7335
1000 : USD 0.7234
N/A

Obsolete
0 - WHS 5

MOQ : 1
Multiples : 1

Stock Image

FDD6530A
ON Semiconductor

1 : USD 1.85
10 : USD 0.8425
100 : USD 0.5203
500 : USD 0.4701
1000 : USD 0.4126
2500 : USD 0.3992
5000 : USD 0.3849
10000 : USD 0.3797
25000 : USD 0.3797
N/A

Obsolete
0 - WHS 6

MOQ : 2500
Multiples : 2500

Stock Image

FDD6530A
ON Semiconductor

2500 : USD 0.4733
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDD6 30A5 FDD6 5 PowerTrench 20V A, 0 V 2 R = 3 m2 V = V 4.5 R = m V = .5 V 2 This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC Low gate charge (6.5 nC typical) converters using either synchronous or conventional switching PWM controllers. It has been optimized for Fast switching low gate charge, low R( ON) and fast switching speed. High performance trench technology for extremely DS(ON) DC/DC converter . Motor drives D D G G S S o T =25 C unless otherwise noted A Ratings Units V Drain-Source Voltage V V Gate-Source Voltage 8 V I Drain Current Continuous A D Pulsed P W D Power Dissipation 3 6 T , T Operating and Storage Junction Temperature Range 55 to +175 C J Thermal Characteristics R Thermal Resistance, Junction-to-Case C/W JC R Thermal Resistance, Junction-to-Ambient C/W R Thermal Resistance, Junction-to-Ambient C/W Device Marking Reel Size Tape width Quantity FDD630A5 FDD630A5 16mm 2500 units Semic2001 onductor Components Industries, LLC. Publication Order Number: September-2017, Rev. 2 FDD6530A/D 13 Device Package Marking and Ordering Information JA 96 (Note 1b) JA 45 (Note 1a) 4.5 (Note 1) STG 1. (Note 1b) 3. (Note 1a) 33 (Note 1) 100 (Note 1a) 21 (Note 3) GSS DSS 20 Parameter Symbol Absolute Maximum Ratings TO-252 low R Applications DS GS DS(ON) 47 GS DS(ON) General Description 21 Features MOSFET N-Channel 30A

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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