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V = 10 V, I = 12 A This N-Channel MOSFET is produced using Fairchild Semicon- DS(on) GS D ductors advanced PowerTrench process that has been tai- Fast Switching Speed lored to minimize the on-state resistance while maintaining Low Gate Charge superior switching performance. High Performance Trench Technology for Extremely Low R Applications DS(on) High Power and Current Handling Capability DC to DC Converters RoHS Compliant Synchronous Rectification for Server / Telecom PSU Battery Charger AC motor drives and Uninterruptible Power Supplies Off-line UPS D D G G S D-PAK S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDD770N15A Unit V Drain to Source Voltage 150 V DSS - DC 20 V Gate to Source Voltage V GSS - AC (f > 1 Hz) 30 o - Continuous (T = 25 C, Silicon Limited) 18 C I Drain Current A D o - Continuous (T = 100 C, Silicon Limited) 11.4 C I Drain Current - Pulsed (Note 1) 36 A DM E Single Pulsed Avalanche Energy (Note 2) 31.7 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns o (T = 25 C) 56.8 W C P Power Dissipation D o o - Derate Above 25C0.46W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L Thermal Characteristics Symbol Parameter Unit FDD770N15A R Thermal Resistance, Junction to Case, Max. 2.2 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 87 JA 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDD770N15A Rev. 1.2