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FDFME3N311ZT Integrated N-Channel PowerTrench MOSFET and Schottky Diode July 2010 FDFME3N311ZT Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30 V, 1.8 A, 299 m Features General Description This device is designed specifically as a single package solution Max r = 299 m at V = 4.5 V, I = 1.6 A DS(on) GS D for a boost topology in cellular handset and other ultra-portable Max r = 410 m at V = 2.5 V, I = 1.3 A DS(on) GS D applications. It features a MOSFET with low input capacitance, total gate charge and on-state resistance. An independently Low profile: 0.55 mm maximum in the new package connected schottky diode with low forward voltage and reverse MicroFET 1.6x1.6 Thin leakage current to maximize boost efficiency. Free from halogenated compounds and antimony oxides The MicroFET 1.6x1.6 Thin package offers exceptional thermal HBM ESD protection level > 1600 V (Note 3) performance for it s physical size and is well suited to switching and linear mode applications. RoHS Compliant Application Boost Functions D NC A D Pin1 K S G K TOP BOTTOM MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage 12 V GS Drain Current -Continuous T = 25 C (Note 1a) 1.8 A I A D -Pulsed 4.5 Power Dissipation for Single Operation T = 25 C (Note 1a) 1.4 A P W D Power Dissipation for Single Operation T = 25 C (Note 1b) 0.6 A V Schottky Repetitive Peak Reverse Voltage 28 V RRM I Schottky Average Forward Current 1 A O T , T Operating and Storage Junction Temperature Range (Note 4) -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Single Operation) (Note 1a) 90 JA R Thermal Resistance, Junction to Ambient (Single Operation) (Note 1b) 195 JA C/W R Thermal Resistance, Junction to Ambient (Single Operation) (Note 1c) 110 JA R Thermal Resistance, Junction to Ambient (Single Operation) (Note 1d) 234 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 1T FDFME3N311ZT MicroFET 1.6x1.6 Thin 7 8mm 5000 units 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDFME3N311ZT Rev.C3