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FDMB2308PZ Dual Common Drain P-Channel PowerTrench MOSFET April 2014 FDMB2308PZ Dual Common Drain P-Channel PowerTrench MOSFET -20 V, -7 A, 36 m Features General Description Max r = 36 m at V = -4.5 V, I = -5.7 A S1S2(on) GS D This device is designed specifically as a single package solution Max r = 50 m at V = -2.5 V, I = -4.6 A for Li-Ion battery pack protection circuit and other ultra-portable S1S2(on) GS D applications. It features two common drain P-channel Low Profile - 0.8 mm maximum - in the new package MOSFETs, which enables bidirectional current flow, on MicroFET 2x3 mm Fairchilds advanced PowerTrench process with state of the art HBM ESD protection level 2.8 kV (Note 3) MircoFET Leadframe, the FDMB2308PZ minimizes both PCB space and r . RoHS Compliant S1S2(on) Application Li-Ion Battery Pack Pin 1 S1 S1 G1 Pin 1 G1 G2 4 3 D1/D2 S1 S2 5 2 6 1 S1 S2 S2 S2 G2 MLP 2x3 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Source1 to Source2 Voltage -20 V S1S2 V Gate to Source Voltage 12 V GS Source1 to Source2 Current -Continuous T = 25 C (Note 1a) -7 A I A S1S2 -Pulsed -30 Power Dissipation T = 25 C (Note 1a) 2.2 A P W D Power Dissipation T = 25 C (Note 1b) 0.8 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 57 JA C/W R Thermal Resistance, Junction to Ambient (Note 1b) 161 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 308 FDMB2308PZ MLP 2x3 7 8 mm 3000 units 1 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMB2308PZ Rev.C3