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FDMB3900AN Dual N-Channel PowerTrench MOSFET June 2013 FDMB3900AN Dual N-Channel PowerTrench MOSFET 25 V, 7.0 A, 23 m Features General Description Max r = 23 m at V = 10 V, I = 7.0 A These N-Channel Logic Level MOSFETs are produced using DS(on) GS D Fairchild Semiconductors advanced PowerTrench process Max r = 33 m at V = 4.5 V, I = 5.5 A DS(on) GS D that has been especially tailored to minimize the on-state Fast switching speed resistance and yet maintain superior switching performance. Low gate charge These devices are well suited for low voltage and battery powered applications where the low in-line power loss and fast High performance trench technology for extremely low r DS(on) switching are required. High power and current handling capability RoHS Compliant Pin 1 Q2 4 G2 D2 5 D2 S2 6 3 Q1 G1 2 D1 7 D1 8 1 S1 MicroFET 3X1.9 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C (Note 1a) 7.0 A I A D -Pulsed 28 Power Dissipation T = 25 C (Note 1a) 1.6 A P W D Power Dissipation T = 25 C (Note 1b) 0.8 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 80 JA C/W R Thermal Resistance, Junction to Ambient (Note 1b) 165 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 3900 FDMB3900AN MicroFET 3X1.9 7 8 mm 3000 units 1 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMB3900AN Rev.C3