FDMC6675BZ P-Channel POWERTRENCH MOSFET 30 V, 20 A, 14.4 m Description www.onsemi.com The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package V R MAX I technologies have been combined to offer the lowest R and ESD DS DS(on) D MAX DS(on) protection. 30 V 20 A 14.4 m 10 V Features PChannel Max R = 14.4 m at V = 10 V, I = 9.5 A DS(on) GS D Max R = 27.0 m at V = 4.5 V, I = 6.9 A DS(on) GS D S 1 8 D HBM ESD Protection Level of 8 kV Typical (Note 3) Extended V Range (25 V) for Battery Applications S 2 7 D GSS High Performance Trench Technology for Extremely Low R DS(on) S 3 6 D High Power and Current Handling Capability These Devices are PbFree, Halogen Free/BFR Free and are RoHS G 4 5 D Compliant Typical Applications Pin 1 G Load Switch in Notebook and Server S S S Notebook Battery Pack Power Management D D D D Top Bottom WDFN8 3.3x3.3, 0.65P CASE 511DR MARKING DIAGRAM Y&Z&2&K FDMC 6675BZ Y = ON Semiconductor Logo &Z = Assembly Plant Code &2 = Numeric Date Code &K = Lot Code FDMC6675BZ = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: September, 2018 Rev. 4 FDMC6675BZ/DFDMC6675BZ MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise specified) A Symbol Parameter Ratings Unit V V Drain to Source Voltage 30 DS V V Gate to Source Voltage 25 GS A I 20 Drain Current Continuous T = 25C D C Continuous T = 25C (Note 1a) 9.5 A Pulsed 32 W P Power Dissipation T = 25C 36 D C 2.3 Power Dissipation T = 25C (Note 1a) A C T , T Operating and Storage Junction Temperature Range 55 to +150 J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit C/W R Thermal Resistance, Junction to Case 3.4 JC R Thermal Resistance, Junction to Ambient (Note 1a) 53 JA PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Shipping (Qty / Packing) FDMC6675BZ FDMC6675BZ WDFN8 3.3x3.3, 0.65P 13 12 mm 3000 / Tape & Reel (MLP) (PbFree/Halogen Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Volt- 30 V DSS I = 250 A, V = 0 V D GS age Breakdown Voltage I = 250 A, referenced to 25C 20 mV/C BV D DSS Temperature Coefficient T J I Zero Gate Voltage Drain Current V = 24 V, V = 0 V 1 A DSS DS GS V = 24 V, V = 0 V, T = 125C 100 DS GS J I Gate to Source Leakage Current V = 25 V, V = 0 V 10 A GSS GS DS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A 1.0 1.9 3.0 V GS(th) GS DS D Gate to Source Threshold Voltage 6.0 mV/C I = 250 A, referenced to 25C V D GS(th) Temperature Coefficient T J R Static Drain to Source V = 10 V, I = 9.5 A 10.7 14.4 m DS(on) GS D On Resistance V = 4.5 V, I = 6.9 A 17.4 27.0 GS D V = 10 V, I = 9.5 A, T = 125C 15.2 20.5 GS D J g Forward Transconductance V = 5 V, I = 9.5 A 28 S FS DD D www.onsemi.com 2