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FDMC8622 N-Channel Shielded Gate PowerTrench MOSFET June 2014 FDMC8622 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 16 A, 56 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max r = 56 m at V = 10 V, I = 4 A DS(on) GS D incorporates Shielded Gate technology. This process has been Max r = 90 m at V = 6 V, I = 3 A optimized for r , switching performance and ruggedness. DS(on) GS D DS(on) High performance trench technology for extremely low r DS(on) High power and current handling capability in a widely used Application surface mount package DC-DC Primary Switch 100% UIL Tested Termination is Lead-free and RoHS Compliant Bottom Top DD D D S D 8 7 6 5 S D S D G D G S S S 12 3 4 MLP 3.3X3.3 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C 16 C I -Continuous TA = 25 C (Note 1a) 4 A D -Pulsed (Note 4) 30 E Single Pulse Avalanche Energy (Note 3) 37 mJ AS Power Dissipation T = 25 C 31 C P W D Power Dissipation T = 25 C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 4.0 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC8622 FDMC8622 MLP 3.3X3.3 13 12 mm 3000 units 2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMC8622 Rev.C6