FDMS3616S PowerTrench Power Stage June 2011 FDMS3616S PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max r = 6.6 m at V = 10 V, I = 16 A dual PQFN package. The switch node has been internally DS(on) GS D connected to enable easy placement and routing of synchronous Max r = 9.4 m at V = 4.5 V, I = 13 A DS(on) GS D buck converters. The control MOSFET (Q1) and synchronous Q2: N-Channel SyncFET (Q2) have been designed to provide optimal power Max r = 3.5 m at V = 10 V, I = 18 A DS(on) GS D efficiency. Max r = 5.2 m at V = 4.5 V, I = 15 A DS(on) GS D Applications Low inductance packaging shortens rise/fall times, resulting in lower switching losses Computing MOSFET integration enables optimum layout for lower circuit Communications inductance and reduced switch node ringing General Purpose Point of Load RoHS Compliant Notebook VCORE G1 Pin 1 D1 D1 D1 Q 2 S2 D1 D1 5 4 PHASE PHASE D1 S2 6 3 (S1/D2) D1 S2 7 2 G2 S2 G2 S2 G1 8 1 Q 1 S2 Power 56 Top Bottom MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 25 25 V DS V Gate to Source Voltage (Note 3) 20 20 V GS Drain Current -Continuous (Package limited) T = 25 C 23 18 C -Continuous (Silicon limited) T = 25 C 89 88 C I A D 1a 1b -Continuous T = 25 C 16 18 A -Pulsed 45 36 4 5 E Single Pulse Avalanche Energy 38 98 mJ AS 1a 1b Power Dissipation for Single Operation T = 25C 2.3 2.3 A P W D 1c 1d Power Dissipation for Single Operation T = 25C 1.0 1.0 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics 1a 1b R Thermal Resistance, Junction to Ambient 55 55 JA C/W 1c 1d R Thermal Resistance, Junction to Ambient 125 125 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity Y8OA FDMS3616S Power 56 13 12 mm 3000 units K10OC 2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS3616S Rev.C5 FDMS3616S PowerTrench Power Stage Electrical Characteristics T = 25C unless otherwise noted J Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics I = 250 A, V = 0 V Q1 25 D GS BV Drain to Source Breakdown Voltage V DSS I = 1 mA, V = 0 V Q2 25 D GS BV Breakdown Voltage Temperature I = 250 A, referenced to 25C Q1 18 DSS D mV/C T Coefficient I = 10 mA, referenced to 25C Q2 16 J D Q1 1 I Zero Gate Voltage Drain Current V = 20 V, V = 0 V A DSS DS GS Q2 500 Q1 100 nA I Gate to Source Leakage Current V = 20 V, V = 0 V GSS GS DS Q2 100 nA On Characteristics V = V , I = 250 A Q1 1.2 1.7 2.5 GS DS D V Gate to Source Threshold Voltage V GS(th) V = V , I = 1 mA Q2 1.2 1.8 2.5 GS DS D V Gate to Source Threshold Voltage I = 250 A, referenced to 25C Q1 -5 GS(th) D mV/C T Temperature Coefficient I = 10 mA, referenced to 25C Q2 -6 J D V = 10 V, I = 16 A 4.7 6.6 GS D V = 4.5 V, I = 13 A Q1 6.7 9.4 GS D V = 10 V, I = 16 A, T = 125C 6.6 9.6 GS D J r Static Drain to Source On Resistance m DS(on) V = 10 V, I = 18 A 2.5 3.5 GS D V = 4.5 V, I = 15 A Q2 3.7 5.2 GS D V = 10 V, I = 18 A, T = 125C 3.6 5.4 GS D J V = 5 V, I = 16 A Q1 63 DD D g Forward Transconductance S FS V = 5 V, I = 18 A Q2 84 DD D Dynamic Characteristics Q1 1326 1765 Q1: C Input Capacitance pF iss Q2 2175 2895 V = 13 V, V = 0 V, f = 1 MHZ DS GS Q1 342 455 C Output Capacitance pF oss Q2: Q2 574 765 V = 13 V, V = 0 V, f = 1 MHZ DS GS Q1 78 115 C Reverse Transfer Capacitance pF rss Q2 118 180 Q1 0.2 0.9 2.9 R Gate Resistance g Q2 0.2 1.0 3.2 Switching Characteristics Q1 7.7 15 t Turn-On Delay Time ns d(on) Q1 Q2 9.5 19 V = 13 V, I = 16 A, R = 6 DD D GEN Q1 1.7 10 t Rise Time ns r Q2 3 10 Q1 19 34 Q2 t Turn-Off Delay Time ns d(off) Q2 24 49 V = 13 V, I = 18 A, R = 6 DD D GEN Q1 1.4 10 t Fall Time ns f Q2 2.2 10 Q1 19 27 Q Total Gate Charge V = 0V to 10 V nC Q1 g(TOT) GS Q2 31 43 V = 13 V, DD Q1 9 13 I = 16 A Q Total Gate Charge V = 0V to 4.5 V nC D g(TOT) GS Q2 14 20 Q1 3.6 Q Gate to Source Charge nC Q2 gs Q2 5.7 V = 13 V, DD Q1 2.4 I = 18 A Q Gate to Drain Miller Charge nC D gd Q2 3.7 2011 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDMS3616S Rev.C5