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FDMS4435BZ P-Channel Power Trench MOSFET October 2014 FDMS4435BZ P-Channel PowerTrench MOSFET -30 V, -18 A, 20 m Features General Description Max r = 20 m at V = -10 V, I = -9.0 A This P-Channel MOSFET is produced using Fairchild DS(on) GS D Max r = 37 m at V = -4.5 V, I = -6.5 A Semiconductors advanced Power Trench process that has DS(on) GS D been especially tailored to minimize the on-state resistance. This Extended V range (-25 V) for battery applications GSS device is well suited for Power Management and load switching applications common in Notebook Computers and High performance trench technology for extremely low r DS(on) Portable Battery Packs. High power and current handling capability Applications HBM ESD protection level >7 kV typical (Note 4) 100% UIL tested High side in DC-DC Buck Converters Termination is Lead-free and RoHS Compliant Notebook battery power management Load switch in Notebook Top Bottom Pin 1 S D 5 G 4 S S G D 6 3 S D 7 2 S D D D 8 D S 1 D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -30 V DS V Gate to Source Voltage 25 V GS Drain Current -Continuous (Package limited) T = 25 C -18 C -Continuous (Silicon limited) T = 25 C -35 C I A D -Continuous T = 25 C (Note 1a) -9.0 A -Pulsed -50 E Single Pulse Avalanche Energy (Note 3) 18 mJ AS Power Dissipation T = 25 C 39 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3.2 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS4435BZ FDMS4435BZ Power 56 13 12 mm 3000 units 1 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMS4435BZ Rev.C4