MOSFET N-Channel, DUAL COOL 56, POWERTRENCH 30 V, 100 A, 0.99 m FDMS7650DC www.onsemi.com General Description This NChannel MOSFET is produced using ON Semiconductors Pin 1 S advanced POWERTRENCH process. Advancements in both silicon S S and DUAL COOL package technologies have been combined to offer G the lowest r while maintaining excellent switching performance DS(on) D by extremely low JunctiontoAmbient thermal resistance. D D D Features Top Bottom DUAL COOL Top Side Cooling PQFN package DFN8 5x6.15, 1.27P, Max r = 0.99 m at V = 10 V, I = 36 A DS(on) GS D DUAL COOL 56 Max r = 1.55 m at V = 4.5 V, I = 32 A CASE 506EG DS(on) GS D High performance technology for extremely low r DS(on) This Device is PbFree and is RoHS Compliant MARKING DIAGRAM AYWWZZ 7650 7650 = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code D 5 4 G D 6 3 S S D 7 2 D 8 1 S NChannel MOSFET ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: September, 2020 Rev. 2 FDMS7650DC/DFDMS7650DC MOSFET MAXIMUM RATINGS (T = 25C unless otherwise specified) A Symbol Parameter Rating Unit V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) +20 V GS I A Drain Current Continuous (Package limited) T = 25C 100 D C Continuous (Silicon limited) T = 25C 289 C Continuous T = 25 C (Note 1a) 47 A Pulsed 200 E Single Pulse Avalanche Energy (Note 3) 578 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 5) 0.5 V/ns P Power Dissipation T = 25C 125 W D C Power Dissipation T = 25C (Note 1a) 3.3 A T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Rating Unit R Thermal Resistance, Junction to Case (Top Source) 2.3 C/W JC Thermal Resistance, Junction to Case (Bottom Drain) 1 R JC R Thermal Resistance, Junction to Ambient (Note 1a) 38 JA R Thermal Resistance, Junction to Ambient (Note 1b) 81 JA R Thermal Resistance, Junction to Ambient (Note 1i) 16 JA R Thermal Resistance, Junction to Ambient (Note 1j) 23 JA R Thermal Resistance, Junction to Ambient (Note 1k) 11 JA www.onsemi.com 2