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Advancements in both silicon and package Max r = 12.5 m : at V = -4.5 V, I = -11.2 A DS(on) GS D technologies have been combined to offer the lowest r and DS(on) ESD protection. Advanced Package and Silicon Combination for Low r DS(on) Applications HBM ESD Protection Level of 8 kV Typical(Note 3) Load Switch in Notebook and Server MSL1 Robust Package Design Notebook Battery Pack Power Management RoHS Compliant D D D G D 5 4 5 4 D 6 3 S D 6 3 G S D 7 2 7 2 S S Pin 1 S 8 1 S D 8 1 Top Bottom Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter Ratings Units V Drain to Source Voltage -30 V DS V Gate to Source Voltage 25 V GS Drain Current -Continuous T = 25 C -82 (Note 5) C -Continuous T = 100 C -52 (Note 5) C I A D -Continuous T = 25 C (Note 1a) -15.2 A -Pulsed -422 (Note 4) Power Dissipation T = 25 C 73 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.7 T JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 T JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS6673BZ FDMS6673BZ Power 56 13 12 mm 3000 units 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMS6673BZ Rev 1.7