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FDMS7676 N-Channel PowerTrench MOSFET October 2014 FDMS7676 N-Channel PowerTrench MOSFET 30 V, 5.5 m : Features General Description This N-Channel MOSFET has been designed specifically to Max r = 5.5 m : at V = 10 V, I = 19 A DS(on) GS D improve the overall efficiency and to minimize switch node Max r = 7.6 m : at V = 4.5 V, I = 15 A DS(on) GS D ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized Advanced Package and Silicon design for low r and high DS(on) for low gate charge, low r , fast switching speed and body DS(on) efficiency diode reverse recovery performance. Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with Applications minimum EMI in sync buck converter applications IMVP Vcore Switching for Notebook MSL1 robust package design VRM Vcore Switching for Desktop and Server 100% UIL tested OringFET / Load Switch RoHS Compliant DC-DC Conversion Bottom Top Pin 1 S D 5 G 4 S S G S D 6 3 S D 7 2 D D 8 1 S D D D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) 20 V GS Drain Current -Continuous (Package limited) T = 25 C 28 C -Continuous (Silicon limited) T = 25 C 76 C I A D -Continuous T = 25 C (Note 1a) 16 A -Pulsed 90 E Single Pulse Avalanche Energy (Note 3) 72 mJ AS Power Dissipation T = 25 C 48 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 2.6 T JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 T JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS7676 FDMS7676 Power 56 13 12 mm 3000 units 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMS7676 Rev C1