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FDMS7698 N-Channel PowerTrench MOSFET October 2014 FDMS7698 N-Channel PowerTrench MOSFET 30 V, 22 A, 10 m Features General Description Max r = 10 m at V = 10 V, I = 13.5 A This N-Channel MOSFET has been designed specifically to DS(on) GS D Max r = 15 m at V = 4.5 V, I = 11.0 A improve the overall efficiency and to minimize switch node DS(on) GS D ringing of DC/DC converters using either synchronous or Advanced Package and Silicon combination for low r DS(on) conventional switching PWM controllers. It has been optimized and high efficiency for low gate charge, low r , fast switching speed and body DS(on) diode reverse recovery performance. Next generation enhanced body diode technology, engineered for soft recovery Applications MSL1 robust package design IMVP Vcore Switching for Notebook 100% UIL tested VRM Vcore Switching for Desktop and server RoHS Compliant OringFET / Load Switching DC-DC Conversion Top Bottom Pin 1 S G D 5 4 S S G S D 6 3 D 7 S 2 D D 1 S D 8 D D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) 20 V GS Drain Current -Continuous (Package limited) T = 25 C 22 C -Continuous (Silicon limited) T = 25 C 44 C I A D -Continuous T = 25 C (Note 1a) 13.5 A -Pulsed 50 E Single Pulse Avalanche Energy (Note 3) 29 mJ AS Power Dissipation T = 25 C 29 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 4.4 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS7698 FDMS7698 Power 56 13 12 mm 3000 units 2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS7698 Rev.C2