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FDMS8090 PowerTrench Symmetrical Dual April 2013 FDMS8090 PowerTrench Symmetrical Dual 100 V N-Channel MOSFET Features General Description This device includes two fast switching (Qgd minimized) 100V Max r = 13 m at V = 10 V, I = 10 A DS(on) GS D N-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP) Max r = 20 m at V = 6 V, I = 8 A DS(on) GS D package. The package is enhanced for exceptional thermal performance. Low inductance packaging shortens rise/fall times, resulting in lower switching losses MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing Applications 100% UIL tested Bridge Topologies RoHS Compliant Synchronous Rectifier Pair Motor Drives Bottom Top S2 S2 S2 G2 Contact to D1 Contact to D2 G1 G2 1 (backside) (backside) 8 D2 S1 S2 2 7 S1 3 6 S2 Pin 1 D1 Q1 Q2 S1 4 5 S2 S1 S1 S1 G1 Pin 1 Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C 40 C I -Continuous T = 25 C (Note 1a) 10 A D A -Pulsed (Note 4) 120 E Single Pulse Avalanche Energy (Note 3) 253 mJ AS Power Dissipation T = 25 C 59 C P W D Power Dissipation T = 25 C (Note 1a) 2.2 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 2.1 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 55 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS8090 FDMS8090 Power 56 13 12 mm 3000 units 2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS8090 Rev.C1