Product Information

FDMS8095AC

FDMS8095AC electronic component of ON Semiconductor

Datasheet
MOSFET PT5 150V Dual N & P-Channel Power

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.4168 ea
Line Total: USD 1.42

2863 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2863 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

FDMS8095AC
ON Semiconductor

1 : USD 1.3732

2863 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 6
Multiples : 1

Stock Image

FDMS8095AC
ON Semiconductor

6 : USD 1.4168

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMS8095AC Dual N & P-Channel PowerTrench MOSFET August 2015 FDMS8095AC Dual N & P-Channel PowerTrench MOSFET N-Channel: 150 V, 27 A, 30 m P-Channel: -150 V, -2.2 A, 1200 m Features General Description These dual N and P-Channel enhancement mode Power Q1: N-Channel MOSFETs are produced using Fairchild Semiconductors Max r = 30 m at V = 10 V, I = 6.2 A DS(on) GS D advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain Max r = 41 m at V = 6 V, I = 5.2 A DS(on) GS D superior switching performance. Shrinking the area needed for implementation of active clamp topology enabling best in class Q2: P-Channel power density. Max r = 1200 m at V = -10 V, I = -1 A DS(on) GS D Applications Max r = 1400 m at V = -6 V, I = -0.9 A DS(on) GS D Optimised for active clamp forward converters DC-DC Converter Active Clamp RoHS Compliant Bottom Top S2 S2 S2 G2 G2 G1 Contact to D1 Contact to D2 1 (backside) (backside) 8 D2 S2 S1 2 7 S2 Pin 1 3 6 D1 S1 Q1 Q2 4 5 S1 S2 S1 S1 S1 G1 Pin 1 Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 150 -150 V DS V Gate to Source Voltage 20 25 V GS Drain Current -Continuous T = 25 C (Note 5) 27 -2.2 C Drain Current -Continuous T = 100 C (Note 5) 17 -1.4 C I A D 1a 1b -Continuous T = 25 C 6.2 -1 A -Pulsed (Note 4) 143 -8.8 E Single Pulse Avalanche Energy (Note 3) 216 6 mJ AS 1a 1b Power Dissipation for Single Operation T = 25 C 2.3 2.3 A 1c 1d P Power Dissipation for Single Operation T = 25 C 0.9 0.9 W D A Power Dissipation for Single Operation T = 25 C 50 12.5 C T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics 1a 1b R Thermal Resistance, Junction to Ambient 55 55 JA 1c 1d R Thermal Resistance, Junction to Ambient 138 138 C/W JA R Thermal Resistance, Junction to Case 2.5 10 JC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS8095AC FDMS8095AC Power 56 13 12 mm 3000 units 2015 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS8095AC Rev.1.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Aptina / ON Semiconductor
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FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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