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FDMS86101A N-Channel Shielded Gate PowerTrench MOSFET October 2014 FDMS86101A N-Channel Shielded Gate PowerTrench MOSFET 100 V, 60 A, 8 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductors advanced PowerTrench process that Max r = 8 m at V = 10 V, I = 13 A DS(on) GS D incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior Max r = 13.5 m at V = 6 V, I = 9.5 A DS(on) GS D switching performance. Advanced Package and Silicon combination for low r DS(on) and high efficiency MSL1 robust package design Application 100% UIL tested DC-DC Conversion 100% Rg tested RoHS Compliant Bottom Top Pin 1 S D S S S G D Pin 1 S D S D D G D D D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C 60 C I -Continuous T = 25 C (Note 1a) 13 A D A -Pulsed 180 E Single Pulse Avalanche Energy (Note 3) 486 mJ AS Power Dissipation T = 25 C 104 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.2 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS86101A FDMS86101A Power 56 13 12 mm 3000 units 2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS86101A Rev.C2