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FDMS86350ET80 N-Channel PowerTrench MOSFET January 2015 FDMS86350ET80 N-Channel PowerTrench MOSFET 80 V, 198 A, 2.4 m Features General Description This N-Channel MOSFET is produced using Fairchild Extended T rating to 175C J Semiconductors advanced Power Trench process that has Max r = 2.4 m at V = 10 V, I = 25 A DS(on) GS D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max r = 3.2 m at V = 8 V, I = 22 A DS(on) GS D Advanced Package and Silicon combination for low r DS(on) Applications and high efficiency Primary MOSFET MSL1 robust package design Synchronous Rectifier 100% UIL tested Load Switch RoHS Compliant Motor Control Switch Bottom Top Pin 1 S S D S Pin 1 S G D S D S D D D D G D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 80 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C (Note 5) 198 C -Continuous T = 100 C (Note 5) 140 C I A D -Continuous T = 25 C (Note 1a) 25 A -Pulsed (Note 4) 693 E Single Pulse Avalanche Energy (Note 3) 864 mJ AS Power Dissipation T = 25 C 187 C P W D Power Dissipation T = 25 C (Note 1a) 3.3 A T , T Operating and Storage Junction Temperature Range -55 to +175 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 0.8 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 45 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS86350ET FDMS86350ET80 Power 56 13 12 mm 3000 units 2015 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS86350ET80 Rev. 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