DATA SHEET www.onsemi.com MOSFET N-Channel, V R MAX I MAX DSS DS(ON) D POWERTRENCH 80 V 4.5 m 10 V 80 A 80 V, 80 A, 4.5 m ELECTRICAL CONNECTION FDMS86368-F085 Features Typical R = 3.7 m at V = 10 V, I = 80 A DS(on) GS D Typical Q = 57 nC at V = 10 V, I = 80 A g(tot) GS D UIS Capability AECQ101 Qualified NChannel MOSFET These Devices are PbFree and are RoHS Compliant Applications Top Bottom D D Automotive Engine Control D D PowerTrain Management G Solenoid and Motor Drivers S S S Integrated Starter/Alternator Pin 1 Primary Switch for 12 V Systems DFNW8 CASE 507AU MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise specified) J Symbol Parameter Ratings Unit MARKING DIAGRAM V Drain to Source Voltage 80 V DSS V Gate to Source Voltage 20 V GS I Drain Current (T = 25C) A D C Continuous (V = 10 V) (Note 1) 80 GS ON AYWWWL Pulsed (see Fig. 124) FDMS E Single Pulse Avalanche Energy 82 mJ AS 86368 (Note 2) P Power Dissipation 214 W D Derate above 25C 1.43 W/C A = Assembly Location T , T Operating and Storage 55 to +175 C J STG Y = Year Temperature WW = Work Week WL = Assembly Lot R Thermal Resistance 0.7 C/W JC (Junction to case) FDMS = Device Code 86368 = Device Code R Maximum Thermal Resistance 50 C/W JA (Junction to Ambient) (Note 3) (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. Current is limited by bondwire configuration. 2. Starting T = 25C, L = 40 H, I = 64 A, V = 80 V during inductor charging J AS DD Device Package Shipping and V = 0 V during time in avalanche. DD 3. R is the sum of the junction to case and case to ambient thermal JA FDMS86368F085 DFNW8 3000 / resistance where the case thermal reference is defined as the solder (Power56) Tape & Reel mounting surface of the drain pins. R is guaranteed by design while R JC JA (PbFree) is determined by the board design. The maximum rating presented here is 2 based on mounting on a 1 in pad of 2oz copper. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: October, 2021 Rev. 4 FDMS86368F085/DFDMS86368F085 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Test Conditions Min. Typ. Max. Units OFF CHARACTERISTICS B DraintoSource Breakdown I = 250 A, V = 0 V 80 V VDSS D GS Voltage I DraintoSource Leakage V = 80 V, V = 0 V, T = 25C 1 A DSS DS GS J Current V = 80 V, V = 0 V, T = 175C (Note 4) 1 mA DS GS J I GatetoSource Leakage V = 20 V 100 nA GSS GS Current ON CHARACTERISTICS V Gate to Source Threshold V = V , I = 250 A 2.0 3.0 4.0 V GS(th) GS DS D Voltage R Drain to Source On Resistance I = 80 A, V = 10 V, T = 25C 3.7 4.5 m DS(on) D GS J I = 80 A, V = 10 V, T = 175C (Note 4) 7.4 9.0 D GS J DYNAMIC CHARACTERISTICS C Input Capacitance V = 40 V, V = 0 V, f = 1 MHz 4350 pF iss DS GS C Output Capacitance 636 oss C Reverse Transfer Capacitance 20 rss R Gate Resistance f = 1 MHz 2.5 g Q Total Gate Charge V = 0 V to 10 V V = 64 V, I = 80 A 57 75 nC g(ToT) GS DD D Q Threshold Gate Charge V = 0 V to 2 V 8 g(th) GS Q GatetoSource Gate Charge 23 gs Q GatetoDrain Miller Charge 11 gd SWITCHING CHARACTERISTICS t TurnOn Time V = 40 V, I = 80 A, V = 10V, R = 6 60 ns on DD D GS GEN t TurnOn Delay 23 d(on) t Rise Time 22 r t TurnOff Delay 32 d(off) t Fall Time 13 f t TurnOff Time 59 off DRAINSOURCE DIODE CHARACTERISTICS V SourcetoDrain Diode I = 80 A, V = 0 V 1.25 V SD SD GS Voltage I = 40 A, V = 0 V 1.2 SD GS t ReverseRecovery Time I = 80 A, I / t = 100 A/ s, V = 64 V 58 75 ns rr F SD DD Q ReverseRecovery Charge 49 67 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTE: 4. The maximum value is specified by design at T = 175C. Product is not tested to this condition in production. J www.onsemi.com 2