DATA SHEET www.onsemi.com MOSFET N-Channel, V R MAX I MAX DSS DS(ON) D POWERTRENCH 80 V 7.5 m 10 V 65 A 80 V, 65 A, 7.5 m ELECTRICAL CONNECTION FDMS86369-F085 Features Typ R = 5.9 m at V = 10 V I = 65 A DS(on) GS D Typ Q = 35 nC at V = 10 V I = 65 A g(tot) GS D UIS Capability AECQ101 Qualified and PPAP Capable NChannel MOSFET This Device is PbFree, Halogen Free/BFR Free and is RoHS Compliant Bottom Top D D Applications D D Automotive Engine Control G PowerTrain Management S S Pin 1 S Solenoid and Motor Drivers Integrated Starter/Alternator DFNW8 Primary Switch for 12 V Systems CASE 507AU MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) J MARKING DIAGRAM Parameter Symbol Value Unit DraintoSource Voltage V 80 V DSS GatetoSource Voltage V 20 V GS ON AYWWWL Continuous Drain Current T = 25C I 65 A FDMS C D (V = 10 V) (Note 1) 86369 GS Pulsed Drain Current T = 25C See C Figure 4 Single Pulse Avalanche Energy (Note 2) E 27 mJ AS A = Assembly Location Power Dissipation P 107 W Y = Year D WW = Work Week Derate above 25C 0.71 W/C WL = Assembly Lot FDMS86369 = Specific Device Code Operating and Storage Temperature T , T 55 to C J STG +175 Thermal Resistance (JunctiontoCase) R 1.4 C/W JC ORDERING INFORMATION Maximum Thermal Resistance R 50 C/W JA (JunctiontoAmbient) (Note 3) Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the FDMS86369F085 DFNW8 3000 / device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (Power 56) Tape & Reel 1. Current is limited by bondwire configuration. (PbFree) 2. Starting Tj = 25C, L = 20 H, I = 52 A, V = 80 V during inductor charging AS DD For information on tape and reel specifications, and V = 0 V during time in avalanche. DD including part orientation and tape sizes, please 3. R is the sum of the junction to case and case to ambient thermal JA refer to our Tape and Reel Packaging Specification resistance where the case thermal reference is defined as the solder Brochure, BRD8011/D. mounting surface of the drain pins. R is guaranteed by design while R JC JA is determined by the users board design. The maximum rating presented 2 here is based on mounting on a 1 in pad of 2 oz copper. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: October, 2021 Rev. 4 FDMS86369F085/DFDMS86369F085 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Symbol Parameter Conditions Min Typ Max Unit OFF CHARACTERISTICS B DraintoSource Breakdown Voltage I = 250 A, V = 0 V 80 V VDSS D GS I DraintoSource Leakage Current V = 80 V, T = 25C 1 A DSS DS J V = 0 V GS T = 175C (Note 4) 1 mA J I GatetoSource Leakage Current V = 20 V 100 nA GSS GS ON CHARACTERISTICS V GatetoSource Threshold Voltage V = V , I = 250 A 2.0 3.0 4.0 V GS(th) GS DS D R DraintoSource OnResistance I = 65 A T = 25C 5.9 7.5 m DS(on) D J V = 10 V GS T = 175C (Note 4) 12.2 15.5 J DYNAMIC CHARACTERISTICS C Input Capacitance V = 40 V, V = 0 V, f = 1 MHz 2470 pF iss DS GS C Output Capacitance 400 oss C Reverse Transfer Capacitance 14 rss R Gate Resistance f = 1 MHz 1.8 g Q Total Gate Charge V = 0 to 10 V V = 64 V, 35 46 nC g(tot) GS DD I = 65 A D Q Threshold Gate Charge V = 0 to 2 V 4.5 g(th) GS Q GatetoSource Gate Charge 12.5 gs Q GatetoDrain Miller Charge 8 gd SWITCHING CHARACTERISTICS V = 40 V, I = 65 A, ns t TurnOn Time 39 on DD D V = 10 V, R = 6 GS GEN t TurnOn Delay 15 d(on) t Rise Time 11 r t TurnOff Delay 24 d(off) t Fall Time 8 f t TurnOff Time 48 off DRAINSOURCE DIODE CHARACTERISTICS V SourcetoDrain Diode Voltage I = 65 A, V = 0 V 1.4 V SD SD GS I = 32.5 A, V = 0 V 1.2 SD GS t Reverse Recovery Time I = 65 A, dI /dt = 100 A/ s, V = 64 V 49 74 ns rr F SD DD Q Reverse Recovery Charge 44 68 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at T = 175C. Product is not tested to this condition in production J www.onsemi.com 2