Product Information

FDMS8D8N15C

FDMS8D8N15C electronic component of ON Semiconductor

Datasheet
MOSFET FET ENGR DEV-NOT REL

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.0266 ea
Line Total: USD 4.03

131 - Global Stock
Ships to you between
Thu. 16 May to Tue. 21 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1201 - WHS 1


Ships to you between
Thu. 16 May to Tue. 21 May

MOQ : 45
Multiples : 1

Stock Image

FDMS8D8N15C
ON Semiconductor

45 : USD 2.7018

131 - WHS 2


Ships to you between
Thu. 16 May to Tue. 21 May

MOQ : 1
Multiples : 1

Stock Image

FDMS8D8N15C
ON Semiconductor

1 : USD 4.0266
10 : USD 3.4465
30 : USD 3.1021
100 : USD 2.7516
500 : USD 2.5904
1000 : USD 2.5179

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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FDMS8D8N15C is a MOSFET FET (Field Effect Transistor) device made by ON Semiconductor. It is a 8 V N-channel MOSFET device with an RDS (on) rating as low as 8.0mOhm. The device features fast switching speed and low gate charge. It is a highly efficient device with high breakdown voltage, low on-state resistance and high peak and continuous current capabilities that enables it to used in power supply, motor control, and switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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