MOSFET NChannel, SUPERFET III, FRFET 650 V, 20 A, 190 m NTB190N65S3HF Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductors brand new high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This advanced technology is tailored to minimize V R MAX I MAX DSS DS(ON) D conduction loss, provide superior switching performance, and 650 V 190 m 10 V 20 A withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. D SUPERFET III FRFET MOSFETs optimized reverse recovery performance of body diode can remove additional component and improve system reliability. G Features 700 V T = 150C J S Typ. R = 161 m DS(on) NCHANNEL MOSFET Ultra Low Gate Charge (Typ. Q = 34 nC) g Low Effective Output Capacitance (Typ. C = 316 pF) oss(eff.) 100% Avalanche Tested D These Devices are PbFree and are RoHS Compliant G Applications S 2 D PAK Telecom / Server Power Supplies (TO263 3Lead) Industrial Power Supplies CASE 418AJ EV Charger UPS / Solar MARKING DIAGRAM Y&Z&3&K NTB190 N65S3HF Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot NTB190N65S3HF = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: September, 2019 Rev. 2 NTB190N65S3HF/DNTB190N65S3HF ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 20 A D C Continuous (T = 100C) 12.7 C I Drain Current Pulsed (Note 1) 50 A DM E Single Pulsed Avalanche Energy (Note 2) 220 mJ AS I Avalanche Current (Note 2) 3.7 A AS E Repetitive Avalanche Energy (Note 1) 1.62 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 P Power Dissipation (T = 25C) 162 W D C Derate Above 25C 1.3 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 3.7 A, R = 25 , starting T = 25C. AS G J 3. I 10 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 0.77 C/W JC R Thermal Resistance, Junction to Ambient, Max. (Note 4) 40 JA 2 4. Device on 1 in 2oz copper pad on 1.5 x 1.5 in. board of FR4 material. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Reel Size Tape Width Shipping 2 NTB190N65S3HF NTB190N65S3HF D PAK 330 mm 24 mm 800 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2