FDMT80060DC ON Semiconductor

FDMT80060DC electronic component of ON Semiconductor
FDMT80060DC ON Semiconductor
FDMT80060DC MOSFETs
FDMT80060DC  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of FDMT80060DC MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDMT80060DC MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.FDMT80060DC
Manufacturer:ON Semiconductor
Category:MOSFETs
Description:MOSFET 60V Nch Dual Cool Power Trench MOSFET
Datasheet:FDMT80060DC Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
1: USD 9.516 ea
Line Total: USD 9.52 
Availability : 4553
  
Ship by Mon. 22 Jun to Wed. 24 Jun
QtyUnit Price
1$ 9.516
10$ 6.215
100$ 4.862
1000$ 4.532
3000$ 4.532
  

Availability4553
Ship by Mon. 22 Jun to Wed. 24 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 9.516
10$ 6.215
100$ 4.862
1000$ 4.532
3000$ 4.532

   
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Id - Continuous Drain Current
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Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
Qg - Gate Charge
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We are delighted to provide the FDMT80060DC from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDMT80060DC and other electronic components in the MOSFETs category and beyond.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. TM FDMT80060DC N-Channel Dual Cool 88 PowerTrench MOSFET August 2015 FDMT80060DC TM N-Channel Dual Cool 88 PowerTrench MOSFET 60 V, 292 A, 1.1 m Features General Description Max r = 1.1 m at V = 10 V, I = 43 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D Semiconductors advanced PowerTrench process. Max r = 1.3 m at V = 8 V, I = 37 A DS(on) GS D TM Advancements in both silicon and Dual Cool package Advanced Package and Silicon combination for low r DS(on) technologies have been combined to offer the lowest r DS(on) and high efficiency while maintaining excellent switching performance by extremely Next generation enhanced body diode technology, low Junction-to-Ambient thermal resistance. engineered for soft recovery Applications Low profile 8x8mm MLP package OringFET / Load Switching MSL1 robust package design Synchronous Rectification 100% UIL tested DC-DC Conversion RoHS Compliant Pin 1 G Pin 1 S G D S S D S S D D S D D S D D Top TM Bottom Dual Cool 88 MOSFET Maximum Ratings T = 25 C unless otherwise noted. A Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C (Note 5) 292 C -Continuous T = 100C (Note 5) 184 C I A D -Continuous T = 25 C (Note 1a) 43 A -Pulsed (Note 4) 1825 E Single Pulse Avalanche Energy (Note 3) 2400 mJ AS Power Dissipation T = 25 C 156 C P W D Power Dissipation T = 25 C (Note 1a) 3.2 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Case (Top Source) 1.6 JC R Thermal Resistance, Junction-to-Case (Bottom Drain) 0.8 JC R Thermal Resistance, Junction-to-Ambient (Note 1a) 38 JA R Thermal Resistance, Junction-to-Ambient (Note 1b) 81 C/W JA R Thermal Resistance, Junction-to-Ambient (Note 1i) 15 JA R Thermal Resistance, Junction-to-Ambient (Note 1j) 21 JA R Thermal Resistance, Junction-to-Ambient (Note 1k) 9 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity TM 80060DC FDMT80060DC Dual Cool 88 13 13.3 mm 3000 units 1 www.fairchildsemi.com 2015 Fairchild Semiconductor Corporation FDMT80060DC Rev. 1.1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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