FDN339AN ON Semiconductor

FDN339AN electronic component of ON Semiconductor
FDN339AN ON Semiconductor
FDN339AN MOSFETs
FDN339AN  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FDN339AN MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDN339AN MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.FDN339AN
Manufacturer:ON Semiconductor
Category:MOSFETs
Description:Transistor: N-MOSFET; unipolar; 20V; 3A; 0.5W; SuperSOT-3
Datasheet:FDN339AN Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
777: USD 0.161 ea
Line Total: USD 125.1 
Availability : 5335
  
Ship by Thu. 25 Jun to Wed. 01 Jul
QtyUnit Price
777$ 0.161
1000$ 0.1543
3000$ 0.1534
6000$ 0.1515
9000$ 0.1497
27000$ 0.1471
51000$ 0.1462
102000$ 0.1455
  

Availability5335
Ship by Thu. 25 Jun to Wed. 01 Jul
MOQ : 777
Multiples : 1
QtyUnit Price
777$ 0.161
1000$ 0.1543
3000$ 0.1534
6000$ 0.1515
9000$ 0.1497
27000$ 0.1471
51000$ 0.1462
102000$ 0.1455


Availability2910
Ship by Thu. 25 Jun to Wed. 01 Jul
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.2625
6000$ 0.2625
9000$ 0.2563
15000$ 0.2563
30000$ 0.25


Availability2153
Ship by Tue. 23 Jun to Thu. 25 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.896
5$ 0.8148
10$ 0.742
50$ 0.5096
60$ 0.322


Availability5335
Ship by Thu. 25 Jun to Wed. 01 Jul
MOQ : 1000
Multiples : 250
QtyUnit Price
1000$ 0.2917
1000$ 0.2612
3000$ 0.216

   
Manufacturer
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Case
Mounting
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Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
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On-State Resistance
Gate Charge
Power Dissipation
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We are delighted to provide the FDN339AN from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDN339AN and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDN339AN FDN339AN N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced 3 A, 20 V. R = 0.035 V = 4.5 V DS(ON) GS using Fairchild Semiconductor s advanced PowerTrench R = 0.050 V = 2.5 V. process that has been especially tailored to minimize the DS(ON) GS on-state resistance and yet maintain low gate charge for superior switching performance. Low gate charge (7nC typical). Applications High performance trench technology for extremely low R . DS(ON) DC/DC converter Load switch High power and current handling capability. D D S GS TM G SuperSOT -3 Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage 8 V GSS I Drain Current - Continuous (Note 1a) 3A D - Pulsed 20 P Power Dissipation for Single Operation 0.5 W (Note 1a) D (Note 1b) 0.46 T , T Operating and Storage Junction Temperature Range -55 to +150 C J stg Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 250 C/W JA R Thermal Resistance, Junction-to-Case (Note 1) 75 C/W JC Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity 339 FDN339AN 7 8mm 3000 units Publication Order Number: 1999 Semiconductor Components Industries, LLC. FDN339AN/D December-2017, Rev. 3

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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