X-On Electronics has gained recognition as a prominent supplier of FDN339AN MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDN339AN MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDN339AN ON Semiconductor

FDN339AN electronic component of ON Semiconductor
FDN339AN ON Semiconductor
FDN339AN MOSFETs
FDN339AN  Semiconductors

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See Product Specifications
Part No. FDN339AN
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 20V; 3A; 0.5W; SuperSOT-3
Datasheet: FDN339AN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1782 ea
Line Total: USD 534.6 
Availability - 2910
Ship by Tue. 20 May to Mon. 26 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
5820
Ship by Tue. 20 May to Mon. 26 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1789
6000 : USD 0.1731
9000 : USD 0.1683
12000 : USD 0.1674
27000 : USD 0.164
51000 : USD 0.1631
102000 : USD 0.1624

2061
Ship by Tue. 20 May to Mon. 26 May
MOQ : 411
Multiples : 1
411 : USD 0.6321
505 : USD 0.5153
567 : USD 0.4588
774 : USD 0.3359
854 : USD 0.3045
989 : USD 0.263
1389 : USD 0.1872

2910
Ship by Tue. 20 May to Mon. 26 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1782
6000 : USD 0.1709
9000 : USD 0.1645
15000 : USD 0.1639
21000 : USD 0.1622

20370
Ship by Tue. 20 May to Mon. 26 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1898
6000 : USD 0.18
9000 : USD 0.1787
12000 : USD 0.1787
15000 : USD 0.175

12
Ship by Tue. 27 May to Fri. 30 May
MOQ : 1
Multiples : 1
1 : USD 0.815
10 : USD 0.641
30 : USD 0.5652
100 : USD 0.3192
500 : USD 0.2916
1000 : USD 0.2732

3686
Ship by Fri. 16 May to Tue. 20 May
MOQ : 1
Multiples : 1
1 : USD 0.812
10 : USD 0.5516
25 : USD 0.4774
50 : USD 0.4242
58 : USD 0.3248

2910
Ship by Tue. 20 May to Mon. 26 May
MOQ : 1983
Multiples : 1
1983 : USD 0.2364

8730
Ship by Tue. 20 May to Mon. 26 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1786
6000 : USD 0.1717
9000 : USD 0.1637
15000 : USD 0.1534
21000 : USD 0.1518

2061
Ship by Tue. 20 May to Mon. 26 May
MOQ : 566
Multiples : 1
566 : USD 0.4597
722 : USD 0.3604
815 : USD 0.3192
977 : USD 0.2662
1406 : USD 0.1848

5820
Ship by Tue. 20 May to Mon. 26 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.2105
6000 : USD 0.2036

14550
Ship by Tue. 20 May to Mon. 26 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.2414

2910
Ship by Tue. 20 May to Mon. 26 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.176
6000 : USD 0.1693
9000 : USD 0.1614
15000 : USD 0.1511
21000 : USD 0.1496

11640
Ship by Tue. 20 May to Mon. 26 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.2991
12000 : USD 0.2734

   
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Kind Of Package
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
Category
Brand Category
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We are delighted to provide the FDN339AN from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDN339AN and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDN339AN FDN339AN N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced 3 A, 20 V. R = 0.035 V = 4.5 V DS(ON) GS using Fairchild Semiconductor s advanced PowerTrench R = 0.050 V = 2.5 V. process that has been especially tailored to minimize the DS(ON) GS on-state resistance and yet maintain low gate charge for superior switching performance. Low gate charge (7nC typical). Applications High performance trench technology for extremely low R . DS(ON) DC/DC converter Load switch High power and current handling capability. D D S GS TM G SuperSOT -3 Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage 8 V GSS I Drain Current - Continuous (Note 1a) 3A D - Pulsed 20 P Power Dissipation for Single Operation 0.5 W (Note 1a) D (Note 1b) 0.46 T , T Operating and Storage Junction Temperature Range -55 to +150 C J stg Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 250 C/W JA R Thermal Resistance, Junction-to-Case (Note 1) 75 C/W JC Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity 339 FDN339AN 7 8mm 3000 units Publication Order Number: 1999 Semiconductor Components Industries, LLC. FDN339AN/D December-2017, Rev. 3

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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