ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDN357N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description 1.9 A, 30 V, R = 0.090 V = 4.5 V DS(ON) GS SuperSOTTM-3 N-Channel logic level enhancement mode power field R = 0.060 V = 10 V. DS(ON) GS effect transistors are produced using ON Semiconductor s proprietary, high Industry standard outline SOT-23 surface mount cell density, DMOS technology. This very high density process is especially TM package using proprietary SuperSOT -3 design for tailored to minimize on-state resistance. These devices are particularly superior thermal and electrical capabilities. suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, High density cell design for extremely low R . DS(ON) and low in-line power loss are needed in a very small outline surface mount package Exceptional on-resistance and maximum DC current capability. TM TM SuperSOT -8 SuperSOT -6 SO-8 SOIC-16 SOT-23 SOT-223 D D S S G TM G SuperSOT -3 o Absolute Maximum Ratings T = 25 C unless other wise noted A Symbol Parameter FDN357N Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage - Continuous 20 V GSS I Drain/Output Current - Continuous 1.9 A D - Pulsed 10 P Maximum Power Dissipation (Note 1a) 0.5 W D (Note 1b) 0.46 T ,T Operating and Storage Temperature Range -55 to 150 C J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a) 250 C/W JA Thermal Resistance, Junction-to-Case (Note 1) 75 C/W R JC 1998 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev. 3 FDN357N /D 357