FDN357N ON Semiconductor

FDN357N electronic component of ON Semiconductor
FDN357N ON Semiconductor
FDN357N MOSFETs
FDN357N  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FDN357N MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDN357N MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. FDN357N
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; 0.5W; SuperSOT-3
Datasheet: FDN357N Datasheet (PDF)
Price (USD)
5: USD 0.3654 ea
Line Total: USD 1.83 
Availability : 703
  
Ship by Fri. 26 Sep to Thu. 02 Oct
QtyUnit Price
5$ 0.3654
50$ 0.302
150$ 0.1854
500$ 0.1496
3000$ 0.1394
6000$ 0.1332

Availability 8730
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1728
6000$ 0.1708
9000$ 0.1695
12000$ 0.1671
27000$ 0.1659
51000$ 0.165
102000$ 0.1643


Availability 37830
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1599
9000$ 0.1513
12000$ 0.15
30000$ 0.1487
45000$ 0.1462


Availability 1763
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.546
5$ 0.4508
10$ 0.413
50$ 0.3682
64$ 0.3052


Availability 703
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.3654
50$ 0.302
150$ 0.1854
500$ 0.1496
3000$ 0.1394
6000$ 0.1332

   
Manufacturer
Product Category
Technology
Kind Of Package
Polarisation
Mounting
Case
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
Category
Brand Category
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We are delighted to provide the FDN357N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDN357N and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDN357N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description 1.9 A, 30 V, R = 0.090 V = 4.5 V DS(ON) GS SuperSOTTM-3 N-Channel logic level enhancement mode power field R = 0.060 V = 10 V. DS(ON) GS effect transistors are produced using ON Semiconductor s proprietary, high Industry standard outline SOT-23 surface mount cell density, DMOS technology. This very high density process is especially TM package using proprietary SuperSOT -3 design for tailored to minimize on-state resistance. These devices are particularly superior thermal and electrical capabilities. suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, High density cell design for extremely low R . DS(ON) and low in-line power loss are needed in a very small outline surface mount package Exceptional on-resistance and maximum DC current capability. TM TM SuperSOT -8 SuperSOT -6 SO-8 SOIC-16 SOT-23 SOT-223 D D S S G TM G SuperSOT -3 o Absolute Maximum Ratings T = 25 C unless other wise noted A Symbol Parameter FDN357N Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage - Continuous 20 V GSS I Drain/Output Current - Continuous 1.9 A D - Pulsed 10 P Maximum Power Dissipation (Note 1a) 0.5 W D (Note 1b) 0.46 T ,T Operating and Storage Temperature Range -55 to 150 C J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a) 250 C/W JA Thermal Resistance, Junction-to-Case (Note 1) 75 C/W R JC 1998 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev. 3 FDN357N /D 357

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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