FDN360P FDN360P Single P-Channel, PowerTrench MOSFET Features General Description 2 A, 30 V. R = 80 m V = 10 V DS(ON) GS R = 125 m V = 4.5 V This P-Channel Logic Level MOSFET is DS(ON) GS produced using ON Semiconductor advanced Power Low gate charge (6.2 nC typical) Trench process that has been especially tailored to minimize the on-state resistance and yet maintain High performance trench technology for extremely low gate charge for superior switching performance. low R . DS(ON) These devices are well suited for low voltage and battery powered applications where low in-line power High power version of industry Standard SOT-23 loss and fast switching are required. package. Identical pin-out to SOT-23 with 30% higher power handling capability. These Devices are Pb-Free and are RoHS Compliant D D S G S TM G SuperSOT -3 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS 20 I Drain Current Continuous (Note 1a) 2 A D Pulsed 10 P Power Dissipation for Single Operation (Note 1a) 0.5 D W (Note 1b) 0.46 T , T Operating and Storage Junction Temperature Range 55 to +150 J STG C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 250 C/W R JA C/W R Thermal Resistance, Junction-to-Case (Note 1) 75 JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 360 FDN360P 7 8mm 3000 units 2003 Semiconductor Components Industries, LLC. Publication Order Number: November-2018, Rev. 7 FDN360P /DFDN360P Electrical Characteristics T = 25C unless otherwise noted A Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DrainSource Breakdown Voltage V = 0 V, I = 250 A 30 V DSS GS D BVDSS Breakdown Voltage Temperature 22 I = 250 A, Referenced to 25C mV/C D T Coefficient J V = 24V, V = 0 V 1 A DS GS I Zero Gate Voltage Drain Current DSS 10 V = 24V, V = 0 V, T =55C DS GS J I GateBody Leakage, Forward V = 20 V, V = 0 V 100 nA GSSF GS DS I GateBody Leakage, Reverse V = 20 V, V = 0 V 100 nA GSSR GS DS On Characteristics (Note 2) V Gate Threshold Voltage V = V , I = 250 A 1 1.9 3 V GS(th) DS GS D VGS(th) Gate Threshold Voltage I = 250 A, Referenced to 25C D 4 mV/C Temperature Coefficient T J R Static DrainSource V = 10 V, I = 2 A 63 80 m DS(on) GS D OnResistance 90 136 V = 10 V, I = 2 A, T =125C GS D J V = 4.5 V, I = 1.5A 100 125 GS D I OnState Drain Current V = 10 V, V = 5 V 10 A D(on) GS DS g Forward Transconductance V = 5 V, I = 2 A 5 S FS DS D Dynamic Characteristics C Input Capacitance 298 pF iss V = 15 V, V = 0 V, DS GS C Output Capacitance 83 pF oss f = 1.0 MHz C Reverse Transfer Capacitance 39 pF rss Switching Characteristics (Note 2) t TurnOn Delay Time 6 12 ns d(on) V = 15 V, I = 1 A, DD D V = 10 V, R = 6 GS GEN t TurnOn Rise Time 13 23 ns r t TurnOff Delay Time 11 20 ns d(off) t TurnOff Fall Time 6 12 ns f Q Total Gate Charge 6.2 9 nC g V = 15V, I = 3.6 A, DS D V = 10 V GS Q GateSource Charge 1 nC gs Q GateDrain Charge 1.2 nC gd DrainSource Diode Characteristics and Maximum Ratings I Maximum Continuous DrainSource Diode Forward Current 0.42 A S DrainSource Diode Forward V V = 0 V, I = 0.42 A (Note 2) 0.8 1.2 V SD GS S Voltage Notes: 1. R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of JA the drain pins. R is guaranteed by design while R is determined by the user s board design. JC CA b) 270C/W when mounted on a a) 250C/W when mounted on a 2 minimum pad. 0.02 in pad of 2 oz. copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% www.onsemi.com 2