Product Information

FDN5630

FDN5630 electronic component of ON Semiconductor

Datasheet
Transistor: N-MOSFET; unipolar; 60V; 1.7A; 0.5W; SuperSOT-3

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1277 ea
Line Total: USD 383.1

238620 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
14550 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

FDN5630
ON Semiconductor

3000 : USD 0.118
9000 : USD 0.118
12000 : USD 0.118
30000 : USD 0.118
45000 : USD 0.118

2041 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

FDN5630
ON Semiconductor

1 : USD 0.6084
25 : USD 0.4966
50 : USD 0.3757
100 : USD 0.2548
250 : USD 0.2327

2381 - WHS 3


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 5
Multiples : 5

Stock Image

FDN5630
ON Semiconductor

5 : USD 0.293
50 : USD 0.2349
150 : USD 0.2059
500 : USD 0.1841
3000 : USD 0.1667
6000 : USD 0.1581

4554 - WHS 4


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 5
Multiples : 5

Stock Image

FDN5630
ON Semiconductor

5 : USD 0.3302
25 : USD 0.2561
85 : USD 0.1963
230 : USD 0.1859

11640 - WHS 5


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

FDN5630
ON Semiconductor

3000 : USD 0.1864

238620 - WHS 6


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

FDN5630
ON Semiconductor

3000 : USD 0.1277
6000 : USD 0.1202
12000 : USD 0.1178

     
Manufacturer
Product Category
Technology
Kind Of Package
Polarisation
Case
Mounting
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
LoadingGif

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FDN5630 is an N-Channel Power Trench MOSFET from ON Semiconductor. It is designed to minimize the on-state resistance while providing superior switching performance. The device is offered in an ultra-small SMD-packaged leadless TO-252-3 (DPAK). This package is designed to reduce PCB area by 20%. The product is ideally suited for load switching designs. It provides low RON, fast switching, and ESD protection. This device is suitable for automotive, industrial, and consumer applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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