Product Information

FDN5632N_F085

FDN5632N_F085 electronic component of ON Semiconductor

Datasheet
Fairchild Semiconductor MOSFET Trans MOS N-Ch 60V 1.7A

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.2705 ea
Line Total: USD 811.5

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

FDN5632N_F085
ON Semiconductor

1 : USD 1.8123
10 : USD 0.8771
100 : USD 0.4898
500 : USD 0.3873
1000 : USD 0.3096
3000 : USD 0.2796

0 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3000
Multiples : 3000

Stock Image

FDN5632N_F085
ON Semiconductor

3000 : USD 0.2705

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Product
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDN5632N-F085 N-Channel Logic Level PowerTrench MOSFET FDN5632N-F085 N-Channel Logic Level PowerTrench MOSFET 60 V, 1.6 A, 98 m Features R = 98 m at V = 4.5 V, I = 1.6 A DS(on) GS D R = 82 m at V = 10 V, I = 1.7 A DS(on) GS D Typ Q = 9.2 nC at V = 10 V g(TOT) GS Low Miller Charge UIS Capability Qualified to AEC Q101 RoHS Compliant Applications DC/DC converter Motor Drives MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DSS V Gate to Source Voltage 20 V GS Drain Current Continuous (V = 10V) 1.7 GS I A D Pulsed 10 E Single Pulse Avalanche Energy (Note 1) 74 mJ AS P Power Dissipation 1.1 W D o T , T Operating and Storage Temperature -55 to +150 C J STG o R Thermal Resistance Junction to Case 75 C/W JC 2 o R Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 111 C/W JA Note: o 1: E of 74mJ is 100% test at L=80mH, I =1.4A, starting T = 25 C AS AS J Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 5632 FDN5632N -F085 SSOT3 7 8mm 3000 units 2015 Semiconductor Components Industries, LLC. Publication Order Number: September-2017, Rev. 2 FDN5632N-F085/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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