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V = 10 V, I = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- DS(on) GS D ductors advanced PowerTrench process that has been tai- Low FOM R Q DS(on) * G lored to minimize the on-state resistance while maintaining superior switching performance. Low Reverse-Recovery Charge, Q = 87.9 nC rr Soft Reverse-Recovery Body Diode Applications Enables High Efficiency in Synchronous Rectification Synchronous Rectification for ATX / Server / Telecom PSU Fast Switching Speed Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies 100% UIL Tested RoHS Compliant D G G D S TO-220 S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDP039N08B F102 Unit V Drain to Source Voltage 80 V DSS V Gate to Source Voltage 20 V GSS o - Continuous (T = 25 C, Silicon Limited) 171* C o I Drain Current - Continuous (T = 100 C, Silicon Limited) 121* A D C o - Continuous (T = 25 C, Package Limited) 120 C I Drain Current - Pulsed (Note 1) 684 A DM E Single Pulsed Avalanche Energy (Note 2) 547 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns o (T = 25 C) 214 W C P Power Dissipation D o o - Derate Above 25C1.43W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L * Package limitation current is 120A. Thermal Characteristics Symbol Parameter Unit FDP039N08B F102 R Thermal Resistance, Junction to Case, Max. 0.7 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDP039N08B Rev. C2