ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDP027N08B N-Channel PowerTrench MOSFET FDP027N08B N-Channel PowerTrench MOSFET 80 V, 223 A, 2.7 m Description Features This N-Channel MOSFET is produced using ON Semicon- R = 2.21 m ( Typ.) V = 10 V, I = 100 A DS(on) GS D ductors PowerTrench process that has been tailored to mini- Low FOM R Q DS(on) * G mize the on-state resistance while maintaining superior Low Reverse-Recovery Charge, Q = 112 nC rr switching performance. Soft Reverse-Recovery Body Diode Enables High Efficiency in Synchronous Rectification Fast Switching Speed Applications 100% UIL Tested Synchronous Rectification for ATX / Server / Telecom PSU This device is Pb-Free, Halogen Free/BFR Free and is RoHS Compliant Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies D G G D S TO-220 S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDP027N08B F102 Unit V Drain to Source Voltage 80 V DSS V Gate to Source Voltage 20 V GSS o - Continuous (T = 25 C, Silicon Limited) 223* C o I Drain Current - Continuous (T = 100 C, Silicon Limited) 158* A D C o - Continuous (T = 25 C, Package Limited) 120 C I Drain Current - Pulsed (Note 1) 892 A DM E Single Pulsed Avalanche Energy (Note 2) 917 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns o (T = 25 C) 246 W C P Power Dissipation D o o - Derate Above 25C1.64W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120 A. Thermal Characteristics Symbol Parameter FDP027N08B F102 Unit R Thermal Resistance, Junction to Case, Max. 0.61 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 1 2011 Semiconductor Components Industries, LLC Publication Order Number: December 2017, Rev. 3 FDP027N08B/D