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V = 10 V, I = 10 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 45.6 nC) This MOSFET is tailored to reduce on-state resistance, and to Low C (Typ. 27 pF) provide better switching performance and higher avalanche rss energy strength. This device family is suitable for switching 100% Avalanche Tested power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic Applications lamp ballasts. LCD/LED/PDP TV Lighting Uninterruptible Power Supply AC-DC Power Supply D G G D G S D TO-220 TO-220F S S Absolute Maximum Ratings T = 25C unless otherwise noted. C FDPF20N50 / Symbol Parameter FDP20N50 Unit FDPF20N50T V Drain-Source Voltage 500 V DSS I Drain Current - Continuous (T = 25C) 20 20 * A D C - Continuous (T = 100C) 12.9 12.9 * A C (Note 1) I Drain Current - Pulsed 80 80 *A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 1110 mJ AS (Note 1) I Avalanche Current 20 A AR (Note 1) E Repetitive Avalanche Energy 25 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) 250 38.5 W D C - Derate above 25C 2.0 0.3 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering, L 300 C 1/8 from Case for 5 Seconds * Drain current limited by maximum junction temperature. Thermal Characteristics FDPF20N50/ Symbol Parameter FDP20N50 Unit FDPF20N50T R Thermal Resistance, Junction-to-Case, Max. 0.5 3.3 JC C/W R Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 JA 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDP20N50 / FDPF20N50 / FDPF20N50T Rev. C1