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FDP047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET
October 2013
FDP047AN08A0 / FDH047AN08A0
N-Channel PowerTrench MOSFET
75 V, 80 A, 4.7 m
Applications
Features
Synchronous Rectification for ATX / Server / Telecom PS U
R = 4.0 m (Typ.), V = 10 V, I = 80 A
DS(ON) GS D
Battery Protection Circui t
Q (tot) = 92 nC (Typ.), V = 10V
g GS
Low Miller Charge Motor Drives and Uninterruptible Power Supplie s
LowQ Body Diode
rr
UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82684
D
G
G
G
D
S
D
TO-220
TO-247
S
S
MOSFET Maximum Ratings T = 25C unless otherwise noted
C
FDP047AN08A0
Symbol Parameter Unit
FDH047AN08A0
V Drain to Source Voltage 75 V
DSS
V Gate to Source Voltage 20 V
GS
Drain Current
o
80 A
Continuous (T < 144 C, V = 10V)
C GS
I
D o o
Continuous (T = 25 C, V = 10V, with R = 62 C/W) 15 A
C GS JA
Pulsed Figure 4 A
E Single Pulse Avalanche Energy (Note 1) 475 mJ
AS
Power dissipation 310 W
P
D
o o
Derate above 25C 2.0 W / C
o
T , T Operating and Storage Temperature
-55 to 175 C
J STG
Thermal Characteristics
o
R Thermal Resistance Junction to Case, Max. TO-220, TO-247 0.48 C/W
JC
o
R Thermal Resistance Junction to Ambient, Max. TO-220 (Note 2) 62 C/W
JA
o
30
R Thermal Resistance Junction to Ambient, Max. TO-247 (Note 2) C/W
JA
2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
1
FDP047AN08A0 / FDH047AN08A0 Rev. C2