FDP075N15A / FDB075N15A N-Channel PowerTrench MOSFET FDP075N15A / FDB075N15A N-Channel PowerTrench MOSFET Description 150 V, 130 A, 7.5 m This N-Channel MOSFET is produced using ON Semicon- ductors advanced PowerTrench process that has been tai- Features lored to minimize the on-state resistance while maintaining R = 6.25 m (Typ.) V = 10 V, I = 100 A superior switching performance. DS(on) GS D Fast Switching Low Gate Charge Applications High Performance Trench Technology for Extremely Low R DS(on) Synchronous Rectification for ATX / Server / Telecom PSU High Power and Current Handling Capability Battery Protection Circuit RoHS Compliant Motor Drives and Uninterruptible Power Supplies Micro Solar Inverter D D G G G D S S 2 D -PAK TO-220 S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C FDP075N15A-F102 Symbol Parameter Unit FDB075N15A V Drain to Source Voltage 150 V DSS - DC 20 V Gate to Source Voltage V GSS - AC (f > 1 Hz) 30 o - Continuous (T = 25 C) 130* C I Drain Current A D o - Continuous (T = 100 C) 92 C I Drain Current - Pulsed (Note 1) 522 A DM E Single Pulsed Avalanche Energy (Note 2) 588 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns o (T = 25 C) 333 W C P Power Dissipation D o o - Derate Above 25C2.22W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L * Package limitation current is 120 A. Thermal Characteristics FDP075N15A -F102 Symbol Parameter Unit FDB075N15A R Thermal Resistance, Junction to Case, Max. 0.45 JC o Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 62.5 C/W R JA 2 Thermal Resistance, Junction to Ambient, D2-PAK (1 in Pad of 2-oz Copper), Max. 40 2011 Semiconductor Components Industries, LLC Publication Order Number: Semptember-2017, Rev. 2 FDP075N15A/D FDP075N15A / FDB075N15A N-Channel PowerTrench MOSFET Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FDP075N15A -F102 FDP075N15A TO-220 Tube N/A N/A 50 units 2 FDB075N15A D -PAK Tape and Reel 330 mm 24 mm 800 units FDB075N15A o Electrical Characteristics T = 25 C unless otherwise noted. C Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 150 - - V DSS D GS BV Breakdown Voltage Temperature DSS o o I = 250 A, Referenced to 25C- 0.1 - V/ C D / T Coefficient J V = 120 V, V = 0 V - - 1 DS GS I Zero Gate Voltage Drain Current A DSS o V = 120 V, T = 150 C - - 500 DS C I Gate to Body Leakage Current V = 20 V, V = 0 V - - 100 nA GSS GS DS On Characteristics V Gate Threshold Voltage V = V , I = 250 A2.0-4.0V GS(th) GS DS D R Static Drain to Source On Resistance V = 10 V, I = 100 A - 6.25 7.5 m DS(on) GS D g Forward Transconductance V = 10 V, I = 100 A - 164 - S FS DS D Dynamic Characteristics C Input Capacitance - 5525 7350 pF iss V = 75 V, V = 0 V, DS GS C Output Capacitance - 516 685 pF oss f = 1 MHz C Reverse Transfer Capacitance - 21 - pF rss C Energy Related Output Capacitance V = 75 V, V = 0 V - 909 - pF oss(er) DS GS Q Total Gate Charge at 10V - 77 100 nC g(tot) Q Gate to Source Gate Charge - 26 - nC V = 75 V, I = 100 A, gs DS D V = 10 V Q Gate Charge Threshold to Plateau - 11 - nC GS gs2 (Note 4) Q Gate to Drain Miller Charge - 16 - nC gd ESR Equivalent Series Resistance(G-S) f = 1 MHz - 2.29 - Switching Characteristics t Turn-On Delay Time -28 66 ns d(on) V = 75 V, I = 100 A, t Turn-On Rise Time - 37 84 ns DD D r V = 10 V, R = 4.7 GS G t Turn-Off Delay Time - 62 134 ns d(off) t Turn-Off Fall Time (Note 4) - 21 52 ns f Drain-Source Diode Characteristics I Maximum Continuous Drain to Source Diode Forward Current - - 130* A S I Maximum Pulsed Drain to Source Diode Forward Current - - 520 A SM V Drain to Source Diode Forward Voltage V = 0 V, I = 100 A - - 1.25 V SD GS SD t Reverse Recovery Time -97 - ns V = 0 V, V = 75 V, I = 100 A, rr GS DD SD dI /dt = 100 A/s Q Reverse Recovery Charge - 264 - nC F rr Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. Starting T = 25C, L = 3 mH, I = 19.8 A. J AS 3. I 100 A, di/dt 200 A/s, V BV , starting T = 25C. SD DD DSS J 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 2