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FDP3651U

FDP3651U electronic component of ON Semiconductor
Part No.FDP3651U
Manufacturer: ON Semiconductor
Category:MOSFET
Description: MOSFET 100V 80A 15 OHM NCH POWER TREN
Datasheet: FDP3651U Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.0815 ea
Line Total: USD 2.08

1077 - Global Stock
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4 - WHS 1


Ships to you between
Thu. 06 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 5.5775
10 : USD 4.8646
30 : USD 4.4395
100 : USD 4.0084
500 : USD 3.8111
800 : USD 3.7225

1077 - WHS 2


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 2.0815
10 : USD 1.7365
100 : USD 1.472
500 : USD 1.334
800 : USD 1.1443
2400 : USD 1.1362
5600 : USD 1.0982

We proudly offer the FDP3651U MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the FDP3651U MOSFET.
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
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Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Length
Transistor Type
Type
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDP3651U N-Channel PowerTrench MOSFET October 2013 FDP3651U N-Channel PowerTrench MOSFET 100 V, 80 A, 18 m Features Applications R = 15 m ( Typ.) V = 10 V, I = 80 A DS(on) GS D Consumer Appliances High Performance Trench Technology for Extremely Synchronous Rectification Low R Battery Protection Circuit DS(on) Low Miller Charge Motor drives and Uninterruptible Power Supplies UIS Capability (Single Pulse and Repetitive Pulse) Micro Solar Inverter D G G D S TO-220 S MOSFET Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter FDP3651U Unit V Drain to Source Voltage 100 V DSS V Gate to Source Voltage 20 V GSS Drain Current - Continuous 80 I A D - Pulsed (Note 1) 320 P Power Dissipation 255 W D E Single Pulsed Avalanche Energy (Note 2) 266 mJ AS T , T Operating and Storage Temperature -55 to 175 C J STG Maximum lead temperature soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics R Thermal Resistance , Junction to Ambient, Max. 62 C/W JA R Thermal Resistance , Junction to Case, Max. 0.59 C/W JC Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDP3651U FDP3651U Tube N/A 50 units 1 www.fairchildsemi.com 2006 Fairchild Semiconductor Corporation FDP3651U Rev. C1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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