TM FDPF5N50T N-Channel UniFET MOSFET November 2013 FDPF5N50T TM N-Channel UniFET MOSFET 500 V, 5 A, 1.4 Features Description TM R = 1.15 (Typ.) V = 10 V, I = 2.5 A UniFET MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 11 nC) This MOSFET is tailored to reduce on-state resistance, and to Low C (Typ. 5 pF) rss provide better switching performance and higher avalanche energy strength. This device family is suitable for switching 100% Avalanche Tested power converter applications such as power factor correction Improved dv/dt Capability (PFC), flat panel display (FPD) TV power, ATX and electronic RoHS Compliant lamp ballasts. Applications LCD/LED TV Lighting Uninterruptible Power Supply AC-DC Power Supplylications D G G D S TO-220F S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDPF5N50T Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage 30 V GSS o - Continuous (T = 25 C) 5* C I Drain Current A D o - Continuous (T = 100 C) 3* C I Drain Current - Pulsed (Note 1) 20* A DM E Single Pulsed Avalanche Energy (Note 2) 225 mJ AS I Avalanche Current (Note 1) 5 A AR E Repetitive Avalanche Energy (Note 1) 8.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 28 W C P Power Dissipation D o o - Derate Above 25C0.22W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDPF5N50T Unit R Thermal Resistance, Junction to Case, Max. 4.5 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDPF5N50T Rev. C1TM FDPF5N50T N-Channel UniFET MOSFET Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FDPF5N50T FDPF5N50T TO-220F Tube N/A N/A 50 units o Electrical Characteristics T = 25 C unless otherwise noted. C Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics o BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V, T = 25 C 500 - - V DSS D GS J BV Breakdown Voltage Temperature DSS o o I = 250 A, Referenced to 25C- 0.6 - V/ C D / T Coefficient J V = 500 V, V = 0 V - - 1 DS GS I Zero Gate Voltage Drain Current A DSS o V = 400 V, T = 125C- -10 DS C I Gate to Body Leakage Current V = 30 V, V = 0 V - - 100 nA GSS GS DS On Characteristics V Gate Threshold Voltage V = V , I = 250 A3.0-5.0V GS(th) GS DS D R Static Drain to Source On Resistance V = 10 V, I = 2.5 A - 1.15 1.4 DS(on) GS D g Forward Transconductance V = 20 V, I = 2.5 A - 4.3 - S FS DS D Dynamic Characteristics C Input Capacitance - 480 640 pF iss V = 25 V, V = 0 V, DS GS C Output Capacitance - 66 88 pF oss f = 1 MHz C Reverse Transfer Capacitance - 5 8 pF rss Q Total Gate Charge at 10V -11 15 nC g(tot) V = 400 V, I = 5 A, DS D Q Gate to Source Gate Charge - 3 - nC V = 10 V gs GS (Note 4) Q Gate to Drain Miller Charge - 5 - nC gd Switching Characteristics t Turn-On Delay Time -13 36 ns d(on) V = 250 V, I = 5 A, t Turn-On Rise Time DD D - 22 54 ns r V = 10 V, R = 25 GS G t Turn-Off Delay Time - 28 66 ns d(off) t Turn-Off Fall Time (Note 4) - 20 50 ns f Drain-Source Diode Characteristics I Maximum Continuous Drain to Source Diode Forward Current - - 5 A S I Maximum Pulsed Drain to Source Diode Forward Current - - 20 A SM V Drain to Source Diode Forward Voltage V = 0 V, I = 5 A - - 1.4 V SD GS SD t Reverse Recovery Time - 300 - ns V = 0 V, I = 5 A, rr GS SD dI /dt = 100 A/s Q Reverse Recovery Charge - 1.8 - C F rr Notes: 1: Repetitive rating: pulse-width limited by maximum junction temperature. 2: L = 18 mH, I = 5 A, V = 50 V, R = 25 , starting T = 25C. AS DD G J 3: I 5 A, di/dt 200 A/s, V BV , starting T = 25C. SD DD DSS J 4: Essentially independent of operating temperature typical characteristics. 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 2 FDPF5N50T Rev. C1