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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.TM FDP65N06 N-Channel UniFET MOSFET November 2013 FDP65N06 TM N-Channel UniFET MOSFET 60 V, 65 A, 16 m Features Description TM R = 1 3 m (Typ.) V = 10 V, I = 32.5 A UniFET MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge ( typical 33 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss ( typical 35 pF) provide better switching performance and higher avalanche energy strength. This device family is suitable for switching Fast Switching power converter applications such as power factor correction Improved dv/dt Capability (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D G G D S TO-220 S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FDP65N06 Units V Drain-Source Voltage 60 V DSS I Drain Current - Continuous (T = 25C) 65 A D C - Continuous (T = 100C) 41 A C (Note 1) I Drain Current - Pulsed 260 A DM V Gate-Source Voltage 20 V GSS (Note 2) E Single Pulsed Avalanche Energy 430 mJ AS (Note 1) I Avalanche Current 65 A AR (Note 1) E Repetitive Avalanche Energy 13.5 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) 135 W D C - Derate above 25C 1.08 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDP65N06 Units R Thermal Resistance, Junction-to-Case, Max. 0.92 C/W JC R Thermal Resistance, Junction-to-Ambient, Max. 62.5 C/W JA 2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDP65N06 Rev. C0