Product Information

FDPF18N20FT_G

FDPF18N20FT_G electronic component of ON Semiconductor

Datasheet
MOSFET 200V, 18A, 140mOhm UniFET FRFET MOSFET

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

FDPF18N20FT_G
ON Semiconductor

1 : USD 2.277
10 : USD 1.6875
25 : USD 1.547
100 : USD 1.339
500 : USD 1.0813
1000 : USD 0.9337
2000 : USD 0.89
5000 : USD 0.8787
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Ciss - Input Capacitance
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. TM FDPF18N20FT-G N-Channel UniFET FRFET MOSFET FDPF18N20FT-G TM N-Channel UniFET FRFET MOSFET 200 V, 18 A, 140 m Description TM Features UniFET MOSFET is ON Semiconductor s high voltage R = 129 m (Typ.) V = 10 V, I = 9 A MOSFET family based on planar stripe and DMOS technology. This DS(on) GS D Low Gate Charge (Typ. 20 nC) MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body Low C (Typ. 24 pF) rss diodes reverse recovery performance of UniFET FRFET has been 100% Avalanche Tested rr enhanced by lifetime control. Its t is less than 100nsec and the reverse Improve dv/dt Capability dv/dt immunity is 15V/ns while normal planar MOSFETs have over RoHS Compliant 200nsec and 4.5V/nsec respectively. Therefore, it can remove Applications additional component and improve system reliability in certain applications in which the performance of MOSFETs body diode is LCD/LED TV significant. This device family is suitable for switching power converter Consumer Appliances applications such as power factor correction (PFC), flat panel display Lighting (FPD) TV power, ATX and electronic lamp ballasts. Uninterruptible Power Supply AC-DC Power Supply D G D TO-220F G S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FDPF18N20FT-G Unit V Drain to Source Voltage 200 V DSS V Gate to Source Voltage 30 V GSS o -Continuous (T = 25 C) 18* C I Drain Current A D o -Continuous (T = 100 C) 10.8* C I Drain Current - Pulsed (Note 1) 72* A DM E Single Pulsed Avalanche Energy (Note 2) 324 mJ AS I Avalanche Current (Note 1) 18 A AR E Repetitive Avalanche Energy (Note 1) 10 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 35 W C P Power Dissipation D o o - Derate above 25 C 0.27 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDPF18N20FT-G Unit R Thermal Resistance, Junction to Case, Max. 3.6 JC o R Thermal Resistance, Case to Sink, Typ. 0.5 C/W CS R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2012 Semiconductor Components Industries, LLC. Publication Order Number: 1 September-2017, Rev. 3 FDPF18N20FT-G/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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