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V = 10 V, I = 3.25 A UniFET II MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 20 nC) technology. This advanced MOSFET family has the smallest Low C (Typ. 10 pF) rss on-state resistance among the planar MOSFET, and also pro- 100% Avalanche Tested vides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode Improved dv/dt Capability allows UniFET II MOSFET to withstand over 2kV HBM surge RoHS Compliant TM stress. UniFET II Ultra FRFET MOSFET has much superior body diode reverse recovery performance. Its t is less than rr Applications 50nsec and the reverse dv/dt immunity is 20V/nsec while nor- LCD/LED TV mal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET II Ultra FRFET MOSFET can Lighting remove additional component and improve system reliability in Uninterruptible Power Supply certain applications that require performance improvement of AC-DC Power Supply the MOSFETs body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D G G D S TO-220F S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDPF8N60ZUT Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage 30 V GSS o - Continuous (T = 25 C) 6.5* C I Drain Current A D o - Continuous (T = 100 C) 3.9* C I Drain Current - Pulsed (Note 1) 26* A DM E Single Pulsed Avalanche Energy (Note 2) 420 mJ AS I Avalanche Current (Note 1) 6.5 A AR E Repetitive Avalanche Energy (Note 1) 13.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 34.5 W C P Power Dissipation D o o - Derate Above 25C0.28W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Unit FDPF8N60ZUT R Thermal Resistance, Junction to Case, Max. 3.6 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDPF8N60ZUT Rev. C2