X-On Electronics has gained recognition as a prominent supplier of FDS3512 mosfet across the USA, India, Europe, Australia, and various other global locations. FDS3512 mosfet are a product manufactured by ON Semiconductor. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

FDS3512 ON Semiconductor

FDS3512 electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.FDS3512
Manufacturer: ON Semiconductor
Category:MOSFET
Description: N-Channel 80 V 4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Datasheet: FDS3512 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.948 ea
Line Total: USD 0.95

Availability - 48
Ships to you between
Tue. 11 Jun to Fri. 14 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
48 - WHS 1


Ships to you between
Tue. 11 Jun to Fri. 14 Jun

MOQ : 1
Multiples : 1
1 : USD 0.948
10 : USD 0.6523
30 : USD 0.4359
100 : USD 0.3896
500 : USD 0.3691
1000 : USD 0.3596

2415 - WHS 2


Ships to you between Mon. 10 Jun to Wed. 12 Jun

MOQ : 1
Multiples : 1
1 : USD 2.553
10 : USD 2.1735
100 : USD 1.817
250 : USD 1.6905
500 : USD 1.61
1000 : USD 1.5525
2500 : USD 1.334
5000 : USD 1.3225
10000 : USD 1.3225

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the FDS3512 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDS3512 and other electronic components in the MOSFET category and beyond.

ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDS3512 FDS3512 80V N-Channel PowerTrench MOSFET Features General Description 4.0 A, 80 V R = 70 m V = 10 V DS(ON) GS This N-Channel MOSFET has been designed RDS(ON) = 80 m VGS = 6 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional Low gate charge (13nC Typical) switching PWM controllers. These MOSFETs feature faster switching and lower Fast switching speed gate charge than other MOSFETs with comparable R specifications. DS(ON) High performance trench technology for extremely low RDS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power High power and current handling capability supply designs with higher overall efficiency. D D 5 4 D 6 3 D 7 2 G S 1 8 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 80 V DSS VGSS Gate-Source Voltage 20 V I Drain Current Continuous (Note 1a) 4.0 A D Pulsed 30 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range 55 to +175 J STG C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 R C/W JA R Thermal Resistance, Junction-to-Case (Note 1) 25 C/W JC Package Marking and Ordering Information rking Device Reel Size Tape width Quantity Device Ma FDS3512 FDS3512 13 12mm 2500 units Publication Order Number: 2001 Semiconductor Component Industries, LLC. FDS3512 /D October-2017, Rev. 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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