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FDS4141 P-Channel PowerTrench MOSFET www.onsemi.com FDS4141 P-Channel PowerTrench MOSFET -40V, -10.8A, 13.0m Features General Description Max r = 13.0m at V = -10V, I = -10.5A This P-Channel MOSFET has been produced using On DS(on) GS D Semiconductors proprietary PowerTrench technology to Max r = 19.0m at V = -4.5V, I = -8.4A DS(on) GS D deliver low r and optimized BV capability to offer DS(on) DSS High performance trench technology for extremely low r superior performance benefit in the applications and optimized DS(on) switching performance capability reducing power dissipation RoHS Compliant losses in converter/inverter applications. Applications Control switch in synchronous & non-synchronous buck Load switch Inverter D D D 5 G 4 D D D 6 S 3 D 2 S 7 G SO-8 S D 8 S 1 S Pin 1 S MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -40 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous -10.8 I A D -Pulsed -36 E Single Pulse Avalanche Energy (Note 3) 294 mJ AS Power Dissipation T = 25C (Note 1a) 5 A P W D Power Dissipation T = 25C (Note 1b) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 25 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS4141 FDS4141 SO-8 13 12mm 2500units Semiconductor Components Industries, LLC, 201 7 Publication Order Number: A p r il, 201 7, Rev. 1.0 FDS4141 1