X-On Electronics has gained recognition as a prominent supplier of FDS6574A MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDS6574A MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDS6574A ON Semiconductor

FDS6574A electronic component of ON Semiconductor
FDS6574A ON Semiconductor
FDS6574A MOSFETs
FDS6574A  Semiconductors

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See Product Specifications
Part No. FDS6574A
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Datasheet: FDS6574A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.5811 ea
Line Total: USD 1452.75 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 2500
Multiples : 2500
2500 : USD 0.5811
5000 : USD 0.5811
7500 : USD 0.5811

0
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 2500
Multiples : 2500
2500 : USD 0.8612

0
Ship by Wed. 25 Jun to Fri. 27 Jun
MOQ : 1
Multiples : 1
1 : USD 4.6344
10 : USD 1.6674
100 : USD 1.3049
500 : USD 1.077
1000 : USD 0.8451
2500 : USD 0.7943

0
Ship by Wed. 25 Jun to Fri. 27 Jun
MOQ : 1
Multiples : 1
1 : USD 1.5741
5 : USD 1.2755
15 : USD 1.0584
41 : USD 0.9905

0
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 2500
Multiples : 2500
2500 : USD 1.2296

   
Manufacturer
Product Category
Technology
Kind Of Package
Polarisation
Mounting
Case
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDS6574A from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDS6574A and other electronic components in the MOSFETs category and beyond.

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MOSFET N-Channel, POWERTRENCH 20 V FDS6574A General Description www.onsemi.com This NChannel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either V R MAX I MAX synchronous or conventional switching PWM controllers. It has been DSS DS(on) D optimized for low gate charge, low R and fast switching speed. DS(ON) 20 V 6 m 4.5 V 16 A Features 7 m 2.5 V 16 A, 20 V 9 m 1.8 V R = 6 m V = 4.5 V DS(ON) GS R = 7 m V = 2.5 V DS(ON) GS D R = 9 m V = 1.8 V D DS(ON) GS D Low Gate Charge D High Performance Trench Technology for Extremely Low R DS(ON) G High Power and Current Handling Capability S S This Device is PbFree and are RoHS Compliant S SOIC8 Applications CASE 751EB DC/DC Converter MARKING DIAGRAM FDS6574A ALYW FDS6574A = Specific Device Code A = Assembly Site L = Wafer Lot Number YW = Assembly Start Week PIN CONNECTIONS 5 4 6 3 7 2 8 1 ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: April, 2021 Rev. 2 FDS6574A/DFDS6574A ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Ratings Unit V DrainSource Voltage 20 V DSS V GateSource Voltage 8 V GSS I Drain Current A Continuous (Note 1a) 16 D Pulsed 80 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range 55 to +175 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit R Thermal Resistance, JunctiontoAmbient (Note 1a) 50 C/W JA R Thermal Resistance, JunctiontoCase (Note 1) 25 C/W JC 1. R is the sum of the junctiontocase and casetoambient thermal resistance where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design while R is determined by the users board design. JC CA a. 50C/W when b. 105C/W when c. 125C/W when mounted 2 2 mounted on a 1 in mounted on a 0.04 in on a minimum pad. pad of 2 oz copper pad of 2 oz copper Scale 1:1 on letter size paper www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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